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NSVMMBTH81LT1G

Onsemi

NSVMMBTH81LT1G by Onsemi

NSVMMBTH81LT1G by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the very high-frequency band with a max fT of 600 MHz. With a VCEsat of 0.5V and hFE of 60, it offers efficient performance in small outline packages.

Median Price

$0.124

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.124

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10

$0.124

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Digiode

USA . 1,565 parts In-Stock

1+ parts

$0.361

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1,565

$0.361

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Chip Stock

USA . 40,000 parts In-Stock

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40,000

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NAC Semi

USA . 24,000 parts In-Stock

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$0.124

24,000

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$0.124

Flip Electronics

USA . 9,000 parts In-Stock

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9,000

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Vyrian

USA . 3,767 parts In-Stock

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3,767

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,922 parts In-Stock

1+ parts

$0.066

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3,922

$0.066

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Corohmni

South Africa . 191 parts In-Stock

1+ parts

$0.078

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191

$0.078

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.122

100+ parts

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$0.117

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50

$0.122

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$0.117

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Argo Parts USA

USA . 1,186 parts In-Stock

1+ parts

$0.124

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$0.120

1,186

$0.124

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$0.120

Continental Prestige Electronics

USA . 128 parts In-Stock

1+ parts

$0.124

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$0.122

128

$0.124

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$0.122

Semicontronic

India . 3,698 parts In-Stock

1+ parts

$0.144

100+ parts

$0.140

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$0.140

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3,698

$0.144

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$0.140

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Corphita

USA . 1,732 parts In-Stock

1+ parts

$0.342

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1,732

$0.342

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Aztec Data Supply Inc.

USA . 166 parts In-Stock

1+ parts

$0.686

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166

$0.686

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.864

100+ parts

$0.821

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$0.821

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2,500

$0.864

$0.821

$0.821

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Kulean Microsystems

USA . 8,152 parts In-Stock

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SupplyDigital Components

Austria . 7,736 parts In-Stock

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Problanco Electronics

Mexico . 7,272 parts In-Stock

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UHIMA Technologies

Türkiye . 704 parts In-Stock

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704

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TANS Electronics

Latvia . 499 parts In-Stock

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499

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Overview

Experience the superior performance and reliability of the NSVMMBTH81LT1G by Onsemi, a leading manufacturer in the industry. Ideal for applications in amplifiers, this RF Small Signal Bipolar Junction Transistor (BJT) offers exceptional value with its very high frequency band capabilities. With a maximum VCEsat of just 0.5V and a minimum DC current gain of 60, this transistor provides efficient power dissipation and enhanced functionality. Trust Onsemi to deliver top-notch quality and innovation for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor components and helps in reducing the overall weight of the device.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, such as in certain amplifier circuits.

Configuration: SINGLE

Simplified design for ease of use and integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in such applications.

Surface Mount: YES

Allows for easy and efficient PCB mounting, saving space and enabling automated assembly processes.

Maximum VCEsat: 0.5 V

Low saturation voltage helps in reducing power dissipation and improving efficiency.

Package Shape: RECTANGULAR

Standard shape for easy handling and integration into electronic circuits.

Terminal Form: GULL WING

Facilitates easy and reliable soldering during PCB assembly.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Ideal for applications requiring high-frequency operation, such as RF amplifiers.

No. of Terminals: 3

Simplified pin configuration for straightforward circuit connection.

Maximum Power Dissipation (Abs): 0.225 W

Ensures reliable performance in demanding operating conditions.

Package Style (Meter): SMALL OUTLINE

Compact package size saves space and is ideal for small electronic devices.

Minimum DC Current Gain (hFE): 60

For consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without sacrificing performance.

Maximum Collector-Base Capacitance: 0.85 pF

Low capacitance helps in reducing signal distortion and improving high-frequency performance.

Maximum Collector-Emitter Voltage: 20 V

Can handle high voltage levels without breakdown, making it suitable for various applications.

Transistor Element Material: SILICON

Provides good performance and reliability, common material used in transistors.

Minimum Operating Temperature: -55 °C

Suitable for a wide range of operating environments, including extreme cold conditions.

Maximum Collector Current (IC): 0.05 A

Able to handle moderate current levels, suitable for many amplifier applications.

Terminal Position: DUAL

Offers flexibility in circuit design and connectivity options.

Reference Standard: AEC-Q101

Compliant with automotive industry standards, ensuring high quality and reliability.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency enables fast switching and high-frequency operation in amplifier circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NSVMMBTH81LT1G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.85 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.225 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

NSVMMBTH81LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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