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15GN01MA-TL-E

Onsemi

15GN01MA-TL-E by Onsemi

The Onsemi 15GN01MA-TL-E is an NPN RF BJT with a max power dissipation of 0.4W, hFE of 200, and fT of 1000MHz. Ideal for high-frequency applications requiring low collector current up to 0.05A in surface-mount configurations at temperatures up to 150 °C.

Median Price

$0.074

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 129,000 parts In-Stock

1+ parts

-

100+ parts

$0.074

1k+ parts

$0.061

10k+ parts

$0.055

129,000

-

$0.074

$0.061

$0.055

DigiKey

USA . 129,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.100

129,000

-

-

-

$0.100

Verical

USA . 129,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.068

129,000

-

-

-

$0.068

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,308 parts In-Stock

1+ parts

$0.062

100+ parts

-

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1,308

$0.062

-

-

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Vyrian

USA . 2,447 parts In-Stock

1+ parts

$0.065

100+ parts

-

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-

10k+ parts

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2,447

$0.065

-

-

-

Bristol Electronics

USA . 8,856 parts In-Stock

1+ parts

$0.263

100+ parts

$0.131

1k+ parts

$0.052

10k+ parts

$0.033

8,856

$0.263

$0.131

$0.052

$0.033

Dan-Mar Components

USA . 8,856 parts In-Stock

1+ parts

-

100+ parts

-

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8,856

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Flip Electronics

USA . 6,000 parts In-Stock

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6,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,687 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

-

10k+ parts

-

1,687

$0.058

-

-

-

Corohmni

South Africa . 491 parts In-Stock

1+ parts

$0.065

100+ parts

-

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491

$0.065

-

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Native Components

USA . 157 parts In-Stock

1+ parts

$10.490

100+ parts

-

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157

$10.490

-

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Northwest PG Solutions

USA . 2,218 parts In-Stock

1+ parts

$11.539

100+ parts

$10.385

1k+ parts

-

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2,218

$11.539

$10.385

-

-

Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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306,000

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Continental Prestige Electronics

USA . 129,000 parts In-Stock

1+ parts

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100+ parts

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$0.057

10k+ parts

-

129,000

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-

$0.057

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QUARKTWIN TECHNOLOGY LTD

USA . 28,721 parts In-Stock

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28,721

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Perfect Parts

USA . 10,058 parts In-Stock

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10,058

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Kulean Microsystems

USA . 6,675 parts In-Stock

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6,675

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-

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-

Problanco Electronics

Mexico . 4,858 parts In-Stock

1+ parts

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4,858

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-

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TANS Electronics

Latvia . 2,221 parts In-Stock

1+ parts

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2,221

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-

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UHIMA Technologies

Türkiye . 964 parts In-Stock

1+ parts

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964

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SupplyDigital Components

Austria . 348 parts In-Stock

1+ parts

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348

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Overview

Enhance your RF signal amplification with the 15GN01MA-TL-E by Onsemi. Known for their top-notch quality and reliability, Onsemi offers cutting-edge RF Small Signal Bipolar Junction Transistors (BJT) like no other. Ideal for applications requiring high-frequency performance, this NPN transistor boasts a minimum DC current gain of 200, making it a powerhouse in signal processing. With a maximum operating temperature of 150 °C and a nominal transition frequency of 1000 MHz, this transistor is a game-changer in the world of RF technology. Elevate your projects with the unmatched value and performance that the 15GN01MA-TL-E brings to the table.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used for amplification and switching applications, offering good performance and reliability.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into various applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and enabling automated assembly processes.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4W, this transistor can handle moderate power levels without overheating, increasing its reliability.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures efficient signal amplification and stable performance in various circuit applications.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150 °C allows for reliable performance in high-temperature environments, increasing the transistor's versatility.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05A, this transistor can handle moderate current levels, making it suitable for a wide range of applications.

Terminal Finish: TIN BISMUTH

TIN BISMUTH terminal finish provides good solderability and resistance to environmental factors, ensuring reliable connections in various operating conditions.

Nominal Transition Frequency (fT): 1000 MHz

With a high nominal transition frequency of 1000MHz, this transistor is suitable for high-frequency applications such as RF signal processing and telecommunications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 15GN01MA-TL-E attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Nominal Transition Frequency (fT):

Trade Compliance

15GN01MA-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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