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NTE311

Nte Electronics

NTE311 by Nte Electronics

NTE311 by Nte Electronics is an NPN RF BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 5W, fT of 800MHz, and hFE of 25, making it suitable for high-frequency signal amplification. The package style is cylindrical with a metal body and wire terminals.

Median Price

$5.750

Lifecycle Status

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< 1k

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RS (Exports)

UK . 5 parts In-Stock

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$5.750

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RS Americas

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Nova Conductors

Japan . 15 parts In-Stock

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$4.161

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Electronic Expediters

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Sensible Micro Corp

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EMSNET

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Electronic Supply

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Bristol Electronics

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Powertech Controls

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Beckwith Electronics

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Prism Electronics

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Argo Parts USA

USA . 3,075 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$3.953

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$3.870

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Continental Prestige Electronics

USA . 794 parts In-Stock

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$4.078

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Allen Electronics Distributors

USA . 5 parts In-Stock

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AZTECH Wire

Italy . 702 parts In-Stock

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Microchip USA

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Perfect Parts

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Overview

Experience the superior performance of the NTE311 by Nte Electronics, a top-quality RF Small Signal Bipolar Junction Transistor (BJT) designed for applications like amplifiers in the ultra high frequency band. With a maximum power dissipation of 5W and a minimum DC current gain of 25, this NPN transistor offers exceptional reliability and efficiency. Trust in Nte Electronics' reputation for excellence and choose the NTE311 for your next project to enjoy unmatched value and performance.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good heat dissipation, making the transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures straightforward operation.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, providing optimal performance in such circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into various electronic devices.

Terminal Form: WIRE

Wire terminals offer reliable connections and ease of installation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for applications requiring high-frequency operation, such as RF amplification in the ultra-high frequency range.

Maximum Power Dissipation (Abs): 5 W

With a maximum power dissipation of 5W, this transistor can handle high power levels without overheating.

Maximum Collector-Emitter Voltage: 30 V

With a high maximum voltage rating, this transistor can withstand higher voltages in the circuit.

Nominal Transition Frequency (fT): 800 MHz

High transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NTE311 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Nte Electronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

5 W

Maximum Power Dissipation (Abs):

5 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NTE311 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Nte Electronics

Founded in New Jersey in 1979, NTE Electronics, Inc has grown from a small-town supplier with ten semiconductors in its entire line to the largest aftermarket semiconductor supplier in the industry. Today, our product line consists of over 23,000 devices. Included in this offering is NTE Brand Semiconductors. In January 2001 NTE acquired the assets of the ECG division of Philips N.A. With this addition, NTE became the industry leader in supplying private label aftermarket electronic components to the Industrial, Commercial, Consumer, and MRO marketplace. NTE is a Master Distributor for some of the industry's major manufacturers of electronic components and accessories. NTE's 40,000 square foot headquarters in Bloomfield, NJ houses, under one roof, all the essential services and inventory to continually supply electronic components to its worldwide network of authorized distributors. NTE's warehouse maintains a large inventory of each device to ensure a 98% fill rate and an average 24-hour shipping time. NTE devices are quality tested to consistently assure that they meet or exceed the industry specifications of the device they are replacing. They have been used in NASA space projects, German automobiles, hospital/medical applications and in virtually every type of consumer item. NTE's global network of distributors extends across the United States, Canada, Latin America, the Caribbean and 35 other countries throughout the world. No matter how you measure success, NTE Electronics, Inc has become the leader in the replacement electronic component industry.

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