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3N35

Texas Instruments

3N35 by Texas Instruments

3N35 by Texas Instruments is a NPN BJT transistor with 4 terminals, operating at 150°C. It has a max collector-emitter voltage of 30V and a transition frequency of 150MHz. Ideal for amplifier applications in the very high-frequency band due to its 0.125W power dissipation capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,521 parts In-Stock

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Digiode

USA . 1,968 parts In-Stock

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Electronic Expediters

USA . 6 parts In-Stock

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MISTER SPROCKETS

USA . 4 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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ECAB

Sweden . 1 parts In-Stock

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Parana Technologies

USA . 155 parts In-Stock

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$0.768

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$1.764

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155

$0.768

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$1.764

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DigiPath Technology Company

USA . 449 parts In-Stock

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$0.846

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$0.778

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449

$0.846

$0.778

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ChromeModa Solutions

Germany . 431 parts In-Stock

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$0.863

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$0.708

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$0.863

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IDEA Electronic Components Group

UK . 404 parts In-Stock

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$0.863

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$0.777

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404

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One Stop Electronics

USA . 600 parts In-Stock

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$5.050

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$5.050

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AZTECH Wire

Italy . 240 parts In-Stock

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$8.064

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Native Components

USA . 504 parts In-Stock

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$92.860

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$89.146

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Northwest PG Solutions

USA . 1,528 parts In-Stock

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$102.146

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Corphita

USA . 1,803 parts In-Stock

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Assy Fe

Spain . 24 parts In-Stock

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Overview

Enhance your electronic designs with the superior quality and reliability of the 3N35 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch RF Small Signal Bipolar Junction Transistors that are perfect for amplifier applications in the very high-frequency band. With a maximum power dissipation of 0.125W and a maximum collector-emitter voltage of 30V, this NPN transistor offers unmatched performance and efficiency. Upgrade your projects with the 3N35 and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: METAL

Metal packaging provides excellent thermal conductivity and durability, making this transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and can be easily integrated into various amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Package Shape: ROUND

Round package shape allows for efficient heat dissipation and ease of mounting in circuits.

Terminal Form: WIRE

Wire terminals are easy to solder and provide secure connections, ensuring reliable operation in circuits.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for very high frequency applications, making this transistor suitable for use in RF circuits.

Maximum Power Dissipation (Abs): 0.125 W

With a maximum power dissipation of 0.125W, this transistor can handle high power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style allows for compact integration into circuits, saving space.

Maximum Operating Temperature: 150 °C

Operates reliably at temperatures up to 150°C, making it suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 30 V

With a maximum voltage rating of 30V, this transistor can handle higher voltages in amplification circuits.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability for the transistor element, ensuring long-term operation.

Maximum Collector Current (IC): 0.02 A

Capable of handling collector currents up to 0.02A, making it suitable for small signal amplification tasks.

Terminal Position: BOTTOM

Bottom terminal position allows for easier mounting on circuit boards and reduces the overall footprint of the device.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and ensures stable operation in amplifier circuits.

Nominal Transition Frequency (fT): 150 MHz

With a nominal transition frequency of 150MHz, this transistor is suitable for amplification tasks in the MHz range.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 3N35 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-12

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

3N35 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-845-1731, 5961008451731

NIIN

008451731

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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