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NSVF4015SG4T1G

Onsemi

NSVF4015SG4T1G by Onsemi

NSVF4015SG4T1G by Onsemi is an NPN RF BJT transistor with a max power dissipation of 0.45W and a transition frequency of 10GHz. It is designed for ultra-high frequency band applications such as amplifiers, featuring a small outline package and operating temperature range from -55°C to 150°C.

Median Price

$0.330

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 8,021 parts In-Stock

1+ parts

$0.152

100+ parts

-

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8,021

$0.152

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Mouser Electronics

USA . 6,063 parts In-Stock

1+ parts

$0.440

100+ parts

$0.222

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-

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6,063

$0.440

$0.222

-

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DigiKey

USA . 3,177 parts In-Stock

1+ parts

$0.440

100+ parts

$0.239

1k+ parts

$0.202

10k+ parts

-

3,177

$0.440

$0.239

$0.202

-

Newark

USA . 2,852 parts In-Stock

1+ parts

$0.453

100+ parts

$0.225

1k+ parts

$0.213

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-

2,852

$0.453

$0.225

$0.213

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Flip Electronics (Authorized)

USA . 173,141 parts In-Stock

1+ parts

-

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173,141

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Rochester

USA . 77,788 parts In-Stock

1+ parts

-

100+ parts

$0.221

1k+ parts

$0.183

10k+ parts

$0.163

77,788

-

$0.221

$0.183

$0.163

Verical

USA . 77,788 parts In-Stock

1+ parts

-

100+ parts

-

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$0.204

77,788

-

-

-

$0.204

Chip1Stop

Japan . 8,225 parts In-Stock

1+ parts

-

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8,225

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Distributors (In-Stock)

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Digiode

USA . 1,420 parts In-Stock

1+ parts

$0.154

100+ parts

-

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1,420

$0.154

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Vyrian

USA . 1,344 parts In-Stock

1+ parts

$0.156

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1,344

$0.156

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Bristol Electronics

USA . 195 parts In-Stock

1+ parts

$0.487

100+ parts

$0.180

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195

$0.487

$0.180

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Flip Electronics

USA . 168,141 parts In-Stock

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168,141

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Chip Stock

USA . 32,000 parts In-Stock

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Microfarads

USA . 184 parts In-Stock

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184

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Distributors (Availability)

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Corphita

USA . 394 parts In-Stock

1+ parts

$0.146

100+ parts

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394

$0.146

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Corohmni

South Africa . 356 parts In-Stock

1+ parts

$0.156

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356

$0.156

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Component Stockers USA

USA . 95,923 parts In-Stock

1+ parts

$0.180

100+ parts

$0.170

1k+ parts

$0.150

10k+ parts

$0.150

95,923

$0.180

$0.170

$0.150

$0.150

Continental Prestige Electronics

USA . 77,788 parts In-Stock

1+ parts

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$0.217

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77,788

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$0.217

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Perfect Parts

USA . 19,712 parts In-Stock

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Lixinc

USA . 15,928 parts In-Stock

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15,928

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Kulean Microsystems

USA . 7,155 parts In-Stock

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7,155

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SupplyDigital Components

Austria . 6,237 parts In-Stock

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6,237

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Problanco Electronics

Mexico . 4,124 parts In-Stock

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TANS Electronics

Latvia . 2,212 parts In-Stock

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UHIMA Technologies

Türkiye . 113 parts In-Stock

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113

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Overview

Unleash the power of innovation with the NSVF4015SG4T1G by Onsemi, a top-tier manufacturer renowned for its cutting-edge RF Small Signal Bipolar Junction Transistors. Designed to amplify signals with precision, this NPN transistor delivers exceptional performance in ultra-high-frequency band applications. With a compact rectangular package and dual-terminal configuration, this transistor offers reliability and efficiency like no other. Experience seamless integration and unparalleled quality with the NSVF4015SG4T1G, setting new standards in the world of amplification. Elevate your projects to new heights with this game-changing component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design and easy integration into circuits.

Transistor Application: AMPLIFIER

Optimized for amplification purposes, ensuring high performance in amplifier circuits.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Space-efficient design for compact circuit layouts.

Maximum Power Dissipation (Abs): 0.45 W

Can handle a moderate power dissipation, suitable for a variety of applications.

No. of Terminals: 4

Provides multiple connection points for flexibility in circuitry design.

Maximum Collector-Emitter Voltage: 12 V

Can withstand a relatively high voltage, making it versatile for different voltage requirements.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold temperatures, suitable for a wide range of environments.

Maximum Collector Current (IC): 0.1 A

Can handle a moderate collector current, suitable for various current requirements.

Nominal Transition Frequency (fT): 10000 MHz

High transition frequency enables efficient switching and amplification at high frequencies.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NSVF4015SG4T1G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.45 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSVF4015SG4T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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