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BFR92AW,135

NXP Semiconductors

BFR92AW,135 by NXP Semiconductors

NXP Semiconductors' BFR92AW,135 is an NPN RF BJT transistor with a max fT of 5000 MHz. It's ideal for ultra-high frequency band applications like amplifiers due to its small outline package and high hFE of 40. With a max power dissipation of 0.3 W and VCE of 15V, it operates at up to 150°C ambient temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

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1k+

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Vyrian

USA . 7,171 parts In-Stock

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VNN

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Anansix

USA . 2,237 parts In-Stock

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Digiode

USA . 1,521 parts In-Stock

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Nova Conductors

Japan . 16 parts In-Stock

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AZTECH Wire

Italy . 649 parts In-Stock

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$11.473

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Ampacity Inc.

Singapore . 611 parts In-Stock

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$14.050

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One Stop Electronics

USA . 630 parts In-Stock

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$32.050

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UNI Independent Distributors

Spain . 6,666 parts In-Stock

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Corphita

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Argo Parts USA

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Continental Prestige Electronics

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Microchip USA

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Bastille Electronics

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Overview

Discover the NXP Semiconductors BFR92AW,135 RF Small Signal Bipolar Junction Transistor, a high-quality component designed for ultra-high frequency band applications like amplifiers. With a single NPN configuration and small outline package, this transistor offers reliable performance and efficient power dissipation. Trust in NXP's reputation for excellence in semiconductor manufacturing and unlock new possibilities in your electronics projects with the BFR92AW,135. Experience the value and benefits of superior technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability in various operating conditions.

Configuration: SINGLE

Simplified design with a single transistor configuration, making it easier to integrate into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Allows for easy and efficient PCB assembly, reducing production time and costs.

Maximum Power Dissipation (Abs): 0.3 W

Can handle a maximum power dissipation of 0.3W, making it suitable for low power applications.

Maximum Collector-Emitter Voltage: 15 V

With a maximum collector-emitter voltage of 15V, it can withstand higher voltage levels in circuits.

Nominal Transition Frequency (fT): 5000 MHz

High transition frequency allows for high-frequency signal amplification, making it ideal for ultra-high frequency band applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR92AW,135 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR92AW,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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