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BFR93AW,115

NXP Semiconductors

BFR93AW,115 by NXP Semiconductors

NXP Semiconductors' BFR93AW,115 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3 W. Ideal for amplifier applications, it features a max collector-emitter voltage of 12V and a min DC current gain of 40 hFE.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 4,148 parts In-Stock

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Digiode

USA . 4,127 parts In-Stock

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VNN

France . 2,289 parts In-Stock

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Anansix

USA . 1,380 parts In-Stock

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Speed Components Ltd

Israel . 350 parts In-Stock

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350

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Nova Conductors

Japan . 71 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$1.262

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$1.199

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Aztec Data Supply Inc.

USA . 2,011 parts In-Stock

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$1.470

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Corohmni

South Africa . 235 parts In-Stock

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One Stop Electronics

USA . 795 parts In-Stock

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Semicontronic

India . 717 parts In-Stock

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$7.050

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$6.874

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$6.838

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AZTECH Wire

Italy . 348 parts In-Stock

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$9.362

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Ampacity Inc.

Singapore . 154 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Metaverse IC Inc.

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Perfect Parts

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UNI Independent Distributors

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Continental Prestige Electronics

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Argo Parts USA

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Corphita

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Microchip USA

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Overview

Elevate your RF signal amplification with the BFR93AW,115 from NXP Semiconductors. Designed for ultra-high frequency bands, this NPN transistor offers superior performance and reliability in a compact package. Perfect for amplifier applications, this high-quality component boasts a minimum DC current gain of 40 and a maximum collector-emitter voltage of 12V. With its advanced technology and durable construction, the BFR93AW,115 delivers exceptional value and efficiency for all your RF circuit needs. Experience the difference with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ensuring reliability in various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into common circuit designs, making it versatile and widely compatible.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, providing excellent performance in signal amplification.

Surface Mount: YES

The surface mount capability offers convenience in assembly and saves space on the PCB, making it suitable for compact designs.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra-high frequency band, making it suitable for high-speed applications that require fast signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR93AW,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR93AW,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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