Loading...

KSC1393Y

Onsemi

KSC1393Y by Onsemi

The Onsemi KSC1393Y is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, DC current gain of 90, and operates in the very high frequency band up to 700 MHz. With a max collector-emitter voltage of 30V and power dissipation of 0.25W, it is suitable for high-frequency amplification tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,882 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,882

-

-

-

-

Vyrian

USA . 1,339 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,339

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 8,324 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,324

-

-

-

-

Problanco Electronics

Mexico . 6,759 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,759

-

-

-

-

TANS Electronics

Latvia . 6,138 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,138

-

-

-

-

Kulean Microsystems

USA . 2,794 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,794

-

-

-

-

Supply Digital

USA . 1,978 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,978

-

-

-

-

Corphita

USA . 411 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

411

-

-

-

-

UHIMA Technologies

Türkiye . 295 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

295

-

-

-

-

Corohmni

South Africa . 220 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

220

-

-

-

-

Overview

Experience superior performance with the Onsemi KSC1393Y RF Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, a trusted leader in semiconductor technology, this NPN transistor is perfect for amplifier applications in the very high-frequency band. With a minimum power gain of 20 dB and a minimum DC current gain of 90, this transistor offers exceptional value and reliability. Upgrade your electronic projects with the quality and precision of the KSC1393Y, delivering unparalleled performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Minimum Power Gain (Gp): 20 dB

With a minimum power gain of 20 dB, this transistor can efficiently amplify signals with minimal loss.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band, this transistor is ideal for applications that require high frequency signal amplification.

Maximum Collector-Base Capacitance: 0.5 pF

Low collector-base capacitance helps in minimizing signal distortion and improving high-frequency performance.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30 V, this transistor can handle higher voltage applications reliably.

Nominal Transition Frequency (fT): 700 MHz

High transition frequency of 700 MHz indicates the transistor's ability to amplify signals at high frequencies effectively.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC1393Y attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.5 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

90

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

20 dB

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1393Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20