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BFU550VL

NXP Semiconductors

BFU550VL by NXP Semiconductors

The NXP Semiconductors BFU550VL is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It has a max collector-emitter voltage of 16V, operating temperature up to 150°C, and transition frequency of 11GHz. This small outline transistor features Gull Wing terminals and can handle a max current of 0.05A.

Median Price

$0.194

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 5,200 parts In-Stock

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$0.202

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$0.168

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$0.150

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Verical

USA . 5,200 parts In-Stock

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$0.187

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$0.187

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Digiode

USA . 3,747 parts In-Stock

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$0.137

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Flip Electronics

USA . 20,000 parts In-Stock

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VNN

France . 5,785 parts In-Stock

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Vyrian

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Anansix

USA . 2,848 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Ampacity Inc.

Singapore . 6,854 parts In-Stock

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$0.122

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Corphita

USA . 2,402 parts In-Stock

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$0.130

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Microchip USA

USA . 14,597 parts In-Stock

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$1.009

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AZTECH Wire

Italy . 391 parts In-Stock

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UNI Independent Distributors

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Argo Parts USA

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Experience unparalleled performance with the BFU550VL by NXP Semiconductors, a leading manufacturer in the industry. This RF Small Signal Bipolar Junction Transistor (BJT) offers exceptional amplification capabilities for a wide range of applications in the L Band frequency band. Its high-quality design and superior materials ensure reliability and efficiency, making it the perfect choice for your amplifier needs. Trust NXP Semiconductors to deliver cutting-edge technology that exceeds expectations and provides maximum value to our customers. Elevate your projects with the BFU550VL and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and better performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification purposes, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design with a single transistor configuration for easier integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and resources.

Terminal Form: GULL WING

Gull wing terminal form provides secure connection and easy soldering for reliable operation.

Maximum Power Dissipation (Abs): 0.45 W

High power dissipation capacity allows for efficient handling of power to prevent overheating and ensure stability.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables usage in various environmental conditions without performance degradation.

Maximum Collector-Emitter Voltage: 16 V

Suitable voltage handling capacity for small signal applications, ensuring protection against voltage spikes.

Nominal Transition Frequency (fT): 11000 MHz

High transition frequency enables fast signal switching for high-frequency applications, ensuring optimal performance.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFU550VL attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.72 pF

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFU550VL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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