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MRF237

Motorola

MRF237 by Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;

Median Price

$28.150

Lifecycle Status

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American Microsemiconductor Inc.

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Huijzer Components

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Ampacity Inc.

Singapore . 943 parts In-Stock

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MRF237 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Motorola

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

20 pF

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

5

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

8 W

Maximum Power Dissipation (Abs):

8 W

Minimum Power Gain (Gp):

12 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF237 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-01-324-1158, 5961013241158, 5961-01-217-9259, 5961012179259

NIIN

013241158, 012179259

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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