Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BFP420FH6327XTSA1 by Infineon is a NPN RF BJT with 4.5V VCEO, 0.06A IC, and 25GHz fT. Ideal for C Band applications, it's a single configuration amplifier in a small outline package suitable for surface mount technology.
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This material provides durability and protection for the transistor, ensuring a long lifespan and reliable performance.
NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.
The single configuration simplifies circuit design and integration, making it easier to use in various applications.
Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.
Surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying manufacturing processes.
The rectangular shape provides a compact form factor, making it suitable for space-constrained designs.
Flat terminals ensure a secure and stable connection, reducing the risk of connectivity issues in the circuit.
Having 4 terminals allows for more versatile circuit configurations and connectivity options, increasing the flexibility of the transistor.
The small outline package style saves space on the circuit board, making it ideal for compact electronic devices.
Low collector-base capacitance helps reduce signal distortion and improve high-frequency performance in amplifier circuits.
Having a high collector-emitter voltage rating ensures reliable operation and protection against voltage spikes in the circuit.
Silicon transistors offer high efficiency, low noise, and reliable performance, making them a preferred choice for various applications.
The high collector current rating allows for handling higher currents, making it suitable for demanding amplifier applications.
Tin terminal finish provides good conductivity and solderability, ensuring a reliable connection in the circuit.
Dual terminal positions offer flexibility in circuit design and installation, allowing for different mounting orientations and configurations.
Compliance with AEC-Q101 ensures high reliability and quality standards, making it suitable for automotive and other demanding applications.
High nominal transition frequency indicates high-speed performance, making it ideal for high-frequency amplifier applications.
RF Small Signal Bipolar Junction Transistors (BJT) BFP420FH6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFP420FH6327XTSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Recyclable Glass Carrier 14/Oct/2014 Reel Cover Tape Chg 16/Feb/2016
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
2N2222A
Rectron
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
1N4148
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Continental Device India
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM317T
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
LM358MX
Texas Instruments
LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.
BAT54C-7-F
Diodes Incorporated
BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
C1206C104M5RACTU
KEMET Corporation
KEMET C1206C104M5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±20% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
BSS138BK,215
NXP Semiconductors
NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
BAV99
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
LM107H/883C
National Semiconductor
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
MMBT2222ALT1G
Rochester Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
LM317D2TG
Onsemi
LM317D2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max output voltage of 37V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
Inchange Semiconductor
Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;
B340A-13-F
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Micro Commercial Components
Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N3866
Intersil
NPN; Nominal Transition Frequency (fT): 1000 MHz; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified; Transistor Element Material: SILICON;
NESG260234-T1
Renesas Electronics
Renesas Electronics' NESG260234-T1 is an NPN BJT transistor with a max collector-emitter voltage of 9.2V and a max operating temperature of 150°C. It is designed for ultra-high frequency band applications, featuring a single configuration in a small outline package suitable for surface mount assembly.
BFU730F,115
NXP Semiconductors' BFU730F,115 is an NPN RF BJT with max. power dissipation of 0.197W and min. DC current gain of 205. Ideal for surface mount applications, it has a max. collector current of 0.03A and uses silicon germanium material.
KSC1674R-C
Onsemi's KSC1674R-C is an NPN BJT for RF applications. It features a VCEsat of 0.3V, hFE of 40, and fT of 600MHz. Ideal for ultra-high frequency amplification in through-hole packages with 3 terminals.
MPSH10
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE;
BFU710F,115
RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
MSC80186
STMicroelectronics
MSC80186 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector current of 0.5 A, operates up to 200 °C, and boasts a nominal transition frequency of 3200 MHz. Its ceramic, metal-sealed package ensures reliability in L-band operations.
934063109115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;
BFU520XR,235
NXP Semiconductors' BFU520XR,235 is a NPN RF BJT transistor with 4 terminals. It operates in L Band with a max fT of 10500 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.45 W and can handle up to 16 V collector-emitter voltage.
BFP405H6327XTSA1
Infineon Technologies
BFP405H6327XTSA1 by Infineon is a NPN RF BJT transistor with 4.5V VCEO, 0.025A IC, and 25000MHz fT. Ideal for L Band applications, it features a small outline package with Gull Wing terminals for surface mount amplification needs.
2SC5662T2LP
ROHM
ROHM 2SC5662T2LP is a NPN RF BJT transistor with max. fT of 3200 MHz, hFE of 56, and VCE(max) of 11V. Ideal for S Band applications like amplifiers due to its small outline package and high transition frequency capability.
2N5109
Microsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .4 A; JESD-609 Code: e0;
HFA3096BZ
HFA3096BZ by Renesas Electronics is a RF BJT with NPN and PNP channels, 5 elements, and ultra-high frequency band. It is used for amplifier applications in small outline packages with 16 terminals. With a max fT of 8000 MHz, it offers high performance in compact designs.
BFU790F,115
NXP Semiconductors' BFU790F,115 is an NPN RF BJT with a max power dissipation of 0.234W and min hFE of 235. Ideal for surface mount applications, it has a max IC of 0.1A making it suitable for high-frequency signal amplification in various electronic devices.
Fairchild Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
BF495
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .03 A;
BFP183E7764HTSA1
RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
BFP520H6327XTSA1
BFP520H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating in L Band up to 45GHz. It has a max power dissipation of 0.1W and max collector-emitter voltage of 2.5V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 standard compliance.
MPS5179RLRM
MPS5179RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 900MHz. It is ideal for amplifier applications in the very high-frequency band, featuring a single configuration in a cylindrical package with through-hole terminals.
BFP740E6327
BFP740E6327 by Infineon is a NPN RF BJT with 19.5 dB power gain, ideal for amplifier applications in C band frequencies. It features Gull Wing terminals, 160 min hFE, and can operate b/w -55 to 150 °C with a max collector-emitter voltage of 4 V.
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BFP450H6327XTSA1
BFP450H6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for X Band applications. It has a max fT of 42 GHz, IC of 0.15A, and VCE of 4V. Ideal for amplifier circuits in small outline packages with Gull Wing terminals.
BFP420H6327XTSA1
Infineon's BFP420H6327XTSA1 is an NPN RF BJT transistor with a max fT of 25 GHz. It is ideal for X Band applications, featuring a max VCE of 4.5V and IC of 0.035A. The transistor operates in temperatures as low as -65°C and complies with AEC-Q101 standards.
BFP405FH6327XTSA1
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .012 A; Terminal Form: FLAT;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G4;
BFP420H6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; No. of Elements: 1;
BFP420E6327HTSA1
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; Package Body Material: PLASTIC/EPOXY;
BFP405H6433TR
BFP420E6433HTMA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;
BFP420ECSP
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; Transistor Element Material: SILICON;
BFP405E6327
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .055 W; Maximum Collector Current (IC): .012 A;
BFP405ECSP
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .012 A; Package Shape: RECTANGULAR;
BFP405H6740XT
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;
BFP420E6327BTSA1
BFP420E6433
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;
BFP405E6327XT
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .012 A; Package Shape: RECTANGULAR;
BFP410
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .04 A;
BFP405F
BFP410H6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .04 A; Package Shape: RECTANGULAR;
BFP405H6740
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .025 A; No. of Terminals: 4;
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