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BFP420FH6327XTSA1

Infineon Technologies

BFP420FH6327XTSA1 by Infineon Technologies

BFP420FH6327XTSA1 by Infineon is a NPN RF BJT with 4.5V VCEO, 0.06A IC, and 25GHz fT. Ideal for C Band applications, it's a single configuration amplifier in a small outline package suitable for surface mount technology.

Median Price

$0.234

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 13 parts In-Stock

1+ parts

$0.219

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13

$0.219

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Mouser Electronics

USA . 4,465 parts In-Stock

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$0.350

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$0.172

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$0.156

10k+ parts

$0.137

4,465

$0.350

$0.172

$0.156

$0.137

Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$1.048

100+ parts

$0.954

1k+ parts

$0.859

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350

$1.048

$0.954

$0.859

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EBV Elektronik

Germany . 30,000 parts In-Stock

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Rochester

USA . 12,135 parts In-Stock

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$0.172

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$0.142

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$0.127

12,135

-

$0.172

$0.142

$0.127

Element14

Singapore . 11,021 parts In-Stock

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$0.249

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$0.185

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$0.182

11,021

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$0.249

$0.185

$0.182

RS (Exports)

UK . 8,700 parts In-Stock

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$0.252

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$0.215

8,700

-

-

$0.252

$0.215

Chip1Stop

Japan . 3,175 parts In-Stock

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$0.130

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$0.118

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3,175

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$0.118

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Verical

USA . 60 parts In-Stock

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$0.137

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60

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$0.137

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Distributors (In-Stock)

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Digiode

USA . 626 parts In-Stock

1+ parts

$0.133

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626

$0.133

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Nova Conductors

Japan . 10 parts In-Stock

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$0.187

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10

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Vyrian

USA . 26,734 parts In-Stock

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NAC Semi

USA . 24,000 parts In-Stock

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$0.337

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$0.337

VNN

France . 2,336 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 11,448 parts In-Stock

1+ parts

$0.081

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$0.081

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Ampacity Inc.

Singapore . 25,723 parts In-Stock

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$0.111

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$0.111

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Semicontronic

India . 6,197 parts In-Stock

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$0.111

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$0.108

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$0.108

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6,197

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Corphita

USA . 531 parts In-Stock

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$0.126

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531

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Component Stockers USA

USA . 466,438 parts In-Stock

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$0.170

100+ parts

$0.130

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$0.120

10k+ parts

$0.110

466,438

$0.170

$0.130

$0.120

$0.110

Argo Parts USA

USA . 2,456 parts In-Stock

1+ parts

$0.187

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$0.181

2,456

$0.187

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$0.181

Netroflash

USA . 500 parts In-Stock

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$0.187

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$0.183

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$0.187

$0.183

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Aztec Data Supply Inc.

USA . 1,958 parts In-Stock

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$0.414

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$0.414

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Modulus Dynamics

Lithuania . 14,955 parts In-Stock

1+ parts

$0.704

100+ parts

$0.676

1k+ parts

$0.648

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14,955

$0.704

$0.676

$0.648

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.048

100+ parts

$0.954

1k+ parts

$0.859

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350

$1.048

$0.954

$0.859

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Corohmni

South Africa . 185 parts In-Stock

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$1.285

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Eastek

USA . 312,000 parts In-Stock

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Perfect Parts

USA . 22,664 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,485 parts In-Stock

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Overview

Upgrade your RF amplifier performance with the BFP420FH6327XTSA1 from Infineon Technologies. As a leader in semiconductor manufacturing, Infineon delivers top-quality products that are guaranteed to exceed your expectations. The BFP420FH6327XTSA1 is the perfect solution for applications in the C band frequency range, offering superior amplification capabilities and reliable performance. With its small outline package and high transition frequency of 25 GHz, this NPN transistor provides exceptional value and benefits to customers seeking high-quality RF components. Experience the difference with the BFP420FH6327XTSA1 and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a long lifespan and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape provides a compact form factor, making it suitable for space-constrained designs.

Terminal Form: FLAT

Flat terminals ensure a secure and stable connection, reducing the risk of connectivity issues in the circuit.

No. of Terminals: 4

Having 4 terminals allows for more versatile circuit configurations and connectivity options, increasing the flexibility of the transistor.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it ideal for compact electronic devices.

Maximum Collector-Base Capacitance: 0.3 pF

Low collector-base capacitance helps reduce signal distortion and improve high-frequency performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 4.5 V

Having a high collector-emitter voltage rating ensures reliable operation and protection against voltage spikes in the circuit.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency, low noise, and reliable performance, making them a preferred choice for various applications.

Maximum Collector Current (IC): 0.06 A

The high collector current rating allows for handling higher currents, making it suitable for demanding amplifier applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, ensuring a reliable connection in the circuit.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design and installation, allowing for different mounting orientations and configurations.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures high reliability and quality standards, making it suitable for automotive and other demanding applications.

Nominal Transition Frequency (fT): 25000 MHz

High nominal transition frequency indicates high-speed performance, making it ideal for high-frequency amplifier applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP420FH6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.3 pF

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFP420FH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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