Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G4;
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Digiode
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Vyrian
Modulus Dynamics
$0.829
$0.796
$0.763
Native Components
$1.830
Northwest PG Solutions
$2.013
Corphita
RF Small Signal Bipolar Junction Transistors (BJT) BFP405H6433TR attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies
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BFP405H6433TR Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
1N4148
Iskra Semic Capacitors Industry
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; JESD-609 Code: e0; Maximum Non Repetitive Peak Forward Current: 2 A;
2N2222A
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;
SMBJ18CA
Uniohm
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1552200168
Molex
WIRE AND CABLE;
BAV99
MICRODIODE ELECTRONICS SHENZHEN CO LTD
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Raytheon Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;
LL4148
Onsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1552200253
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
2N7002
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
Capar Components
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Forward Voltage (VF): 1 V; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Output Current: .15 A;
MBRA160T3G
MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
261
New England Microwave
Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;
Yangzhou Yangjie Electronics
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
Surge Components
934067693115
NXP Semiconductors
RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
2N4401
Space Power Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
Rectron
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
BFR93AW,115
NXP Semiconductors' BFR93AW,115 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3 W. Ideal for amplifier applications, it features a max collector-emitter voltage of 12V and a min DC current gain of 40 hFE.
2SC4915-O,LF
Toshiba
2SC4915-O,LF by Toshiba is an NPN RF BJT transistor with a single configuration for amplifier applications. It offers a min power gain of 17 dB and operates in the very high frequency band up to 550 MHz. With a max collector-emitter voltage of 30V and dual terminal position, it is suitable for small outline surface mount designs.
MPSH10RLRE
MPSH10RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp rating (150 °C). The transistor's through-hole package makes it suitable for various cylindrical style designs.
2N5109
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .4 A; Qualification: Not Qualified;
BF224RLRE
The Onsemi BF224RLRE is an NPN RF BJT with a max. collector-emitter voltage of 30V and max. collector current of 0.05A. Operating up to 150 °C, it has a transition frequency of 850MHz, making it ideal for high-frequency applications in very high frequency bands. The transistor's through-hole package with cylindrical shape and bottom terminal position ensures easy installation and reliable performance.
BFR520
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 15 V;
BFR92A
Vishay Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; No. of Terminals: 3;
MSC82040
STMicroelectronics
STMicroelectronics' MSC82040 is an NPN BJT transistor with 4 terminals, ideal for L Band applications. Featuring a max operating temp of 200 °C, it has a fT of 1600 MHz and hFE of 15, making it suitable for amplifier circuits in high-frequency environments. The package style is post/stud mount with a ceramic-metal-sealed co-fired body material.
NESG260234-T1-AZ
Nec Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e6;
BFR92AW,115
NXP Semiconductors' BFR92AW,115 is an NPN RF BJT with a max fT of 5000 MHz. It has a max power dissipation of 0.3 W and operates in the ultra-high frequency band. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mount assembly.
CA3086
Harris Semiconductor
NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: THROUGH-HOLE;
BFR96
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .075 A; Qualification: Not Qualified;
HFA3101BZ
Renesas Electronics
HFA3101BZ by Renesas Electronics is an NPN RF BJT transistor with a max fT of 10GHz. It is used as an amplifier in the ultra-high frequency band, featuring a max operating temp of 150°C and max collector-emitter voltage of 8V. This complex-configured transistor has 6 elements, 8 terminals, and comes in a small outline package with gull wing terminals.
KST10MTF
KST10MTF by Onsemi is an NPN RF BJT with a max power dissipation of 0.35W and fT of 650MHz. Ideal for UHF applications, it has a max VCE of 25V and hFE of 60, making it suitable for high-frequency amplification in compact designs. With a small outline package and gull wing terminals, it offers efficient surface-mount integration.
SS9018GBU
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;
2N5179
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1400 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BFQ255A
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .3 A;
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BFP450H6327XTSA1
Infineon Technologies
BFP450H6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for X Band applications. It has a max fT of 42 GHz, IC of 0.15A, and VCE of 4V. Ideal for amplifier circuits in small outline packages with Gull Wing terminals.
BFP420H6327XTSA1
Infineon's BFP420H6327XTSA1 is an NPN RF BJT transistor with a max fT of 25 GHz. It is ideal for X Band applications, featuring a max VCE of 4.5V and IC of 0.035A. The transistor operates in temperatures as low as -65°C and complies with AEC-Q101 standards.
BFP420FH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .06 A; Terminal Form: FLAT;
BFP405FH6327XTSA1
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .012 A; Terminal Form: FLAT;
BFP405H6327XTSA1
BFP420H6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; No. of Elements: 1;
BFP420E6327HTSA1
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; Package Body Material: PLASTIC/EPOXY;
BFP420E6433HTMA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;
BFP420ECSP
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; Transistor Element Material: SILICON;
BFP405E6327
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .055 W; Maximum Collector Current (IC): .012 A;
BFP405ECSP
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .012 A; Package Shape: RECTANGULAR;
BFP405H6740XT
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;
BFP420E6327BTSA1
BFP420E6433
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;
BFP405E6327XT
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .012 A; Package Shape: RECTANGULAR;
BFP410
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .04 A;
BFP405F
BFP410H6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .04 A; Package Shape: RECTANGULAR;
BFP405H6740
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .025 A; No. of Terminals: 4;
BFP405
Siemens
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .012 A; Maximum Collector-Base Capacitance: .08 pF;
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