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MPS918RLRA

Onsemi

MPS918RLRA by Onsemi

MPS918RLRA by Onsemi is an NPN RF BJT with 3 terminals, operating at a max temp of 150 °C. It has a fT of 600 MHz and Vce(max) of 15V, making it suitable for ultra-high frequency amplifier applications. Packaged in plastic/epoxy, it features a collector-base capacitance of 3pF and collector current up to 0.05A.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,722 parts In-Stock

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Digiode

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TANS Electronics

Latvia . 6,557 parts In-Stock

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Kulean Microsystems

USA . 4,045 parts In-Stock

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Problanco Electronics

Mexico . 3,299 parts In-Stock

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Corohmni

South Africa . 438 parts In-Stock

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Corphita

USA . 314 parts In-Stock

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SupplyDigital Components

Austria . 243 parts In-Stock

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UHIMA Technologies

Türkiye . 107 parts In-Stock

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Overview

Experience the power of innovation with the MPS918RLRA by Onsemi, a high-quality RF Small Signal Bipolar Junction Transistor that delivers exceptional performance in amplifier applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this NPN transistor offers customers unparalleled value and reliability. Ideal for ultra-high frequency bands, this transistor boasts a maximum transition frequency of 600 MHz, making it a top choice for demanding electronic projects. Upgrade your designs with the MPS918RLRA and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN polarity/transistor type is commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and is ideal for basic amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into circuits, making it user-friendly.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides stability and reliability in circuit connections.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency band applications, ensuring high-speed operation and performance.

No. of Terminals: 3

Three terminals provide the necessary connections for proper transistor operation in circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compactness and ease of integration into circuit designs.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments.

Maximum Collector-Base Capacitance: 3 pF

Low collector-base capacitance of 3 pF helps in reducing signal distortion and improving overall performance.

Maximum Collector-Emitter Voltage: 15 V

With a maximum collector-emitter voltage of 15V, this transistor is suitable for low voltage applications.

Transistor Element Material: SILICON

Silicon material ensures reliability and stability in transistor performance.

Maximum Collector Current (IC): 0.05 A

Maximum collector current of 0.05A allows for handling moderate current loads in circuitry.

Terminal Finish: TIN LEAD

Tin lead finish on terminals ensures good conductivity and solderability for easy assembly.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and connection in circuit boards.

Nominal Transition Frequency (fT): 600 MHz

High nominal transition frequency of 600 MHz enables fast signal amplification and processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS918RLRA attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS918RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-359-2005, 5961013592005

NIIN

013592005

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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