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MPS918RLRP

Onsemi

MPS918RLRP by Onsemi

MPS918RLRP by Onsemi is an NPN RF BJT with 3 terminals and a max fT of 600 MHz. Ideal for amplifier applications, it has a max VCE of 15V and operates at up to 150 °C. The package style is cylindrical with through-hole terminals, making it suitable for ultra-high frequency band circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,793 parts In-Stock

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Vyrian

USA . 821 parts In-Stock

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Problanco Electronics

Mexico . 5,824 parts In-Stock

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Kulean Microsystems

USA . 2,274 parts In-Stock

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TANS Electronics

Latvia . 2,021 parts In-Stock

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SupplyDigital Components

Austria . 1,789 parts In-Stock

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Corphita

USA . 1,097 parts In-Stock

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Corohmni

South Africa . 331 parts In-Stock

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UHIMA Technologies

Türkiye . 136 parts In-Stock

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Overview

Unleash the power of innovation with the MPS918RLRP by Onsemi, a top-of-the-line RF Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers unparalleled performance in amplifier applications within the ultra-high frequency band. With a durable plastic/epoxy package and a maximum operating temperature of 150 °C, this transistor guarantees reliability and efficiency. Elevate your projects with the MPS918RLRP and experience seamless functionality and superior results like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design as only one transistor is needed, reducing complexity and cost.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easy to solder and provide a strong mechanical connection, ensuring reliability in circuit connections.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for applications requiring high-frequency operation, making it ideal for use in communication systems and high-speed circuitry.

No. of Terminals: 3

Three terminals provide versatile connectivity options in circuits, allowing for flexibility in circuit design.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compact size and efficient heat dissipation, making it suitable for space-constrained applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, making it suitable for industrial and automotive applications.

Maximum Collector-Base Capacitance: 3 pF

Low capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 15 V

Sufficient voltage rating for many low-power applications, ensuring reliable operation and protection against voltage spikes.

Transistor Element Material: SILICON

Silicon transistors offer high performance, stability, and reliability compared to other materials, ensuring long-term durability.

Maximum Collector Current (IC): 0.05 A

Able to handle moderate collector current, suitable for low-power amplifier applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and corrosion resistance, ensuring a strong electrical connection.

Terminal Position: BOTTOM

Bottom terminal position enables easy PCB mounting and facilitates efficient heat dissipation.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency allows for high-speed signal processing, making it suitable for applications requiring fast switching and amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS918RLRP attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS918RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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