Loading...

SMMBTH10-4LT3G

Onsemi

SMMBTH10-4LT3G by Onsemi

SMMBTH10-4LT3G by Onsemi is an NPN RF BJT with 120 min hFE and 800 MHz fT. It has a 0.3W power dissipation, operates up to 150°C, and is suitable for surface mount applications in RF circuits.

Median Price

$0.097

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,838 parts In-Stock

1+ parts

$0.480

100+ parts

$0.187

1k+ parts

$0.112

10k+ parts

$0.089

3,838

$0.480

$0.187

$0.112

$0.089

Flip Electronics (Authorized)

USA . 160,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

160,000

-

-

-

-

Rochester

USA . 130,000 parts In-Stock

1+ parts

-

100+ parts

$0.097

1k+ parts

$0.081

10k+ parts

$0.072

130,000

-

$0.097

$0.081

$0.072

Verical

USA . 130,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.090

130,000

-

-

-

$0.090

DigiKey

USA . 9,017 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,017

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 579 parts In-Stock

1+ parts

$0.075

100+ parts

-

1k+ parts

-

10k+ parts

-

579

$0.075

-

-

-

Nova Conductors

Japan . 44 parts In-Stock

1+ parts

$0.121

100+ parts

-

1k+ parts

-

10k+ parts

-

44

$0.121

-

-

-

Flip Electronics

USA . 160,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

160,000

-

-

-

-

Vyrian

USA . 86,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

86,300

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 86,375 parts In-Stock

1+ parts

$0.067

100+ parts

-

1k+ parts

-

10k+ parts

-

86,375

$0.067

-

-

-

Corphita

USA . 2,377 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

-

2,377

$0.071

-

-

-

Corohmni

South Africa . 105 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

10k+ parts

-

105

$0.079

-

-

-

Argo Parts USA

USA . 1,946 parts In-Stock

1+ parts

$0.121

100+ parts

-

1k+ parts

-

10k+ parts

$0.118

1,946

$0.121

-

-

$0.118

Component Stockers USA

USA . 4,509 parts In-Stock

1+ parts

$0.470

100+ parts

$0.150

1k+ parts

$0.100

10k+ parts

-

4,509

$0.470

$0.150

$0.100

-

iodParts Technologies Inc.

India . 160,016 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

160,016

-

-

-

-

Continental Prestige Electronics

USA . 130,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.095

10k+ parts

-

130,000

-

-

$0.095

-

TANS Electronics

Latvia . 8,017 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,017

-

-

-

-

Problanco Electronics

Mexico . 6,669 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,669

-

-

-

-

SupplyDigital Components

Austria . 5,245 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,245

-

-

-

-

Kulean Microsystems

USA . 757 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

757

-

-

-

-

UHIMA Technologies

Türkiye . 606 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

606

-

-

-

-

Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.115

10k+ parts

$0.113

50

-

$0.119

$0.115

$0.113

Overview

Unleash the power of precision with the SMMBTH10-4LT3G by Onsemi. This RF Small Signal Bipolar Junction Transistor (BJT) offers unparalleled quality and reliability, making it a top choice for applications requiring NPN polarity and a SINGLE configuration. With a minimum DC current gain of 120 and a maximum operating temperature of 150°C, this transistor delivers exceptional performance in a wide range of scenarios. Trust Onsemi's reputation for excellence and unlock new possibilities with the SMMBTH10-4LT3G.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easier to integrate into electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and reducing production costs.

Maximum Power Dissipation (Abs): 0.3 W

The high maximum power dissipation rating ensures the transistor can handle power efficiently without overheating.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures proper amplification and signal control in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance allows the transistor to operate reliably even in demanding environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability, ensuring strong and reliable connections on the PCB.

Maximum Time At Peak Reflow Temperature (s): 30

This short peak reflow time helps prevent damage to the transistor during the assembly process.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and bonding during the assembly process.

Nominal Transition Frequency (fT): 800 MHz

The high transition frequency allows for high-speed operation, making this transistor suitable for RF and high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SMMBTH10-4LT3G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

SMMBTH10-4LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 2