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SMMBTH10LT1

Onsemi

SMMBTH10LT1 by Onsemi

SMMBTH10LT1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 25V and a transition frequency of 650MHz. It is designed for amplifier applications, featuring a small outline package with gull wing terminals for surface mount assembly in ultra-high-frequency circuits.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 69,000 parts In-Stock

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$0.070

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$0.070

Verical

USA . 69,000 parts In-Stock

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$0.049

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$0.049

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Vyrian

USA . 540 parts In-Stock

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$0.039

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540

$0.039

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Digiode

USA . 1,905 parts In-Stock

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$0.041

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$0.041

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Chip Stock

USA . 73,000 parts In-Stock

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DigiKey Marketplace

USA . 69,000 parts In-Stock

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69,000

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J2 Sourcing AB

Sweden . 62,679 parts In-Stock

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62,679

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Distributors (Availability)

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Corphita

USA . 117 parts In-Stock

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$0.039

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117

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Corohmni

South Africa . 104 parts In-Stock

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$0.039

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104

$0.039

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Continental Prestige Electronics

USA . 69,000 parts In-Stock

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$0.039

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69,000

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$0.039

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Problanco Electronics

Mexico . 8,050 parts In-Stock

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SupplyDigital Components

Austria . 6,755 parts In-Stock

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Kulean Microsystems

USA . 4,443 parts In-Stock

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4,443

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TANS Electronics

Latvia . 3,977 parts In-Stock

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UHIMA Technologies

Türkiye . 309 parts In-Stock

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Overview

Discover the power of the SMMBTH10LT1 by Onsemi, a top-quality RF Small Signal BJT transistor ideal for amplifier applications. Manufactured by Onsemi, this NPN transistor offers exceptional performance in ultra-high frequency bands with a maximum collector-emitter voltage of 25V and a transition frequency of 650MHz. With a compact package style and easy surface mount installation, this transistor provides customers with unmatched value and reliability. Transform your designs with the SMMBTH10LT1 - the perfect choice for high-frequency amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy control and amplification of signal flow, making it suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, reducing complexity and potential for errors.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in signal amplification.

No. of Terminals: 3

Three terminals provide necessary connections for input, output, and power, facilitating easy integration into circuits.

Maximum Collector Current (IC): 0.025 A

With a maximum collector current of 0.025 A, this transistor can handle moderate power levels effectively, suitable for many amplifier applications.

Nominal Transition Frequency (fT): 650 MHz

High transition frequency enables this transistor to operate at ultra-high frequency bands, making it ideal for applications requiring fast signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SMMBTH10LT1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SMMBTH10LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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