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55GN01FA-TL-H

Onsemi

55GN01FA-TL-H by Onsemi

The Onsemi 55GN01FA-TL-H is an NPN RF BJT with a max power dissipation of 0.25W, fT of 3000MHz, and hFE of 100. Ideal for applications requiring high-frequency signal amplification in surface-mount configurations.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,709 parts In-Stock

1+ parts

$0.620

100+ parts

$0.245

1k+ parts

$0.150

10k+ parts

$0.118

2,709

$0.620

$0.245

$0.150

$0.118

DigiKey

USA . 89 parts In-Stock

1+ parts

$0.620

100+ parts

-

1k+ parts

-

10k+ parts

-

89

$0.620

-

-

-

Rochester

USA . 100,696 parts In-Stock

1+ parts

-

100+ parts

$0.139

1k+ parts

$0.116

10k+ parts

$0.103

100,696

-

$0.139

$0.116

$0.103

Verical

USA . 99,567 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.129

99,567

-

-

-

$0.129

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,030 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

10k+ parts

-

2,030

$0.108

-

-

-

Vyrian

USA . 979 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

-

979

$0.114

-

-

-

Maritex

Poland . 92 parts In-Stock

1+ parts

$0.702

100+ parts

$0.177

1k+ parts

$0.119

10k+ parts

$0.106

92

$0.702

$0.177

$0.119

$0.106

Bristol Electronics

USA . 135,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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135,300

-

-

-

-

Sea View Technologies

USA . 127,300 parts In-Stock

1+ parts

-

100+ parts

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127,300

-

-

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Flip Electronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

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8,000

-

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,112 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

-

1,112

$0.103

-

-

-

Corohmni

South Africa . 130 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

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10k+ parts

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130

$0.114

-

-

-

Component Stockers USA

USA . 189,071 parts In-Stock

1+ parts

$0.120

100+ parts

$0.110

1k+ parts

$0.100

10k+ parts

$0.100

189,071

$0.120

$0.110

$0.100

$0.100

Native Components

USA . 462 parts In-Stock

1+ parts

$2.091

100+ parts

-

1k+ parts

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10k+ parts

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462

$2.091

-

-

-

Northwest PG Solutions

USA . 2,264 parts In-Stock

1+ parts

$2.300

100+ parts

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2,264

$2.300

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Continental Prestige Electronics

USA . 143,440 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.130

10k+ parts

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143,440

-

-

$0.130

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QUARKTWIN TECHNOLOGY LTD

USA . 18,051 parts In-Stock

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18,051

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Perfect Parts

USA . 17,920 parts In-Stock

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17,920

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SupplyDigital Components

Austria . 8,389 parts In-Stock

1+ parts

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100+ parts

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8,389

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Kepictronics

USA . 8,000 parts In-Stock

1+ parts

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100+ parts

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8,000

-

-

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Problanco Electronics

Mexico . 6,584 parts In-Stock

1+ parts

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6,584

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Kulean Microsystems

USA . 5,652 parts In-Stock

1+ parts

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5,652

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TANS Electronics

Latvia . 3,302 parts In-Stock

1+ parts

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100+ parts

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3,302

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UHIMA Technologies

Türkiye . 167 parts In-Stock

1+ parts

-

100+ parts

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167

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-

Overview

Enhance your RF signal amplification with the 55GN01FA-TL-H by Onsemi. Crafted by a leading manufacturer in the industry, this NPN transistor offers superior quality and performance. Ideal for various applications, this surface-mount transistor delivers reliable power dissipation, high DC current gain, and optimal operating temperature. Elevate your electronic designs with the unmatched value and benefits of this versatile component. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Polarity or Channel Type NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and widely compatible.

Configuration SINGLE

Single configuration simplifies circuit design and integration, reducing complexity and potential points of failure.

Surface Mount YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort in manufacturing processes.

Maximum Power Dissipation (Abs) 0.25 W

With a maximum power dissipation of 0.25W, this transistor can handle moderate power levels efficiently, ensuring reliable performance.

Minimum DC Current Gain (hFE) 100

A high minimum DC current gain of 100 indicates good amplification capabilities, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature 150 °C

The high maximum operating temperature of 150°C allows for reliable operation in various environmental conditions, increasing the overall durability of the product.

Maximum Collector Current (IC) 0.07 A

The maximum collector current of 0.07A supports a range of current requirements, enabling the transistor to be used in different circuit configurations.

Terminal Finish TIN BISMUTH

Tin Bismuth terminal finish ensures good solderability and reliability, contributing to the overall quality and longevity of the product.

Maximum Time At Peak Reflow Temperature (s) 30

Short reflow time of 30 seconds at peak temperature minimizes thermal stress on the component during assembly, leading to improved solder joint integrity.

Peak Reflow Temperature °C 260

High peak reflow temperature of 260°C enables efficient and reliable soldering during the assembly process, ensuring strong and consistent connections.

Nominal Transition Frequency (fT) 3000 MHz

With a high nominal transition frequency of 3000 MHz, this transistor is well-suited for high-frequency applications such as RF amplification and signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 55GN01FA-TL-H attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

55GN01FA-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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