Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BFP740ESDH6327XTSA1 by Infineon is an NPN RF BJT with 14.5 dB power gain, ideal for amplifier applications in the C band. It features a max operating temperature of 150°C, fT of 45 GHz, and a collector-emitter voltage of 4.2V. This transistor has a small outline package with gull wing terminals and can handle up to 0.16W power dissipation.
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This material is cost-effective and widely available, making it a practical choice for mass production of these transistors.
NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.
A higher power gain indicates better amplification capabilities, making this transistor ideal for applications requiring signal amplification.
Being surface mountable allows for easy integration onto circuit boards, saving space and simplifying assembly.
With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.
The high transition frequency allows for efficient switching and high-speed performance, making this transistor suitable for high-frequency applications.
RF Small Signal Bipolar Junction Transistors (BJT) BFP740ESDH6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Minimum Power Gain (Gp):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFP740ESDH6327XTSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Recyclable Glass Carrier 14/Oct/2014 Reel Cover Tape Chg 16/Feb/2016
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
BAV99
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Pro-an Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
ABS10-32.768KHZ-T
Abracon
Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.
M24308/2-1F
Air Electro
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; MIL Conformity: YES; Additional Features: STANDARD: MIL-DTL-24308;
350766-1
TE Connectivity
TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.
1N4148W-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358MX
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148WS
First Components International
FDN5618P
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;
M39029/56-351
Carlisle Interconnect Technologies
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Type: CRIMP; Removal Tools: M81969/8-06, M81969/14-02; IEC Conformity: NO; Contact Gender: FEMALE;
Silicon Standard
Promax-johnton
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
Rectron
Lite-on Semiconductor
LL4148-GS08
Vishay Intertechnology
The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.
OPA2277UA/2K5E4
Texas Instruments
OPA2277UA/2K5E4 by Texas Instruments is a dual operational amplifier with low-offset and micropower features. It has a max input offset voltage of 100uV, nominal common mode reject ratio of 140dB, and min slew rate of 0.8V/us. Ideal for industrial applications requiring precise signal amplification in compact designs.
STM32H743ZIT6
STMicroelectronics
STM32H743ZIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications, offering features such as 21 timers, CAN and USB connectivity, and low power mode.
MPS3563RL1
MPS3563RL1 by Onsemi is an NPN RF BJT with 600MHz fT, 12V VCEO, and 1.7pF CCB. Ideal for amplifier applications in the UHF band due to its high frequency capability and low collector-base capacitance. Packaged in a cylindrical shape with through-hole terminals, it operates up to 150 °C.
MPS918RL1
MPS918RL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a transition frequency of 600MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a package style of cylindrical shape with through-hole terminals. Operating at up to 150 °C, it has a max collector current of 0.05A and low collector-base capacitance of 3pF.
MPSH10RL
MPSH10RL by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high transition frequency. The transistor's cylindrical package with through-hole terminals makes it suitable for various RF small signal circuits.
MPS6507RL1
MPS6507RL1 by Onsemi is an NPN RF BJT with 20V VCEO, 2.5pF CBC, and 800MHz fT. Ideal for amplifier applications, it has a max operating temp of 150 °C. This through-hole transistor comes in a cylindrical package with tin-lead finish.
MMBT5771
Onsemi's MMBT5771 is a PNP RF BJT transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 0.35W and max operating temp of 150 °C, it offers high performance in a small outline package. Featuring a max collector-emitter voltage of 15V and transition frequency of 700MHz, it suits various RF signal amplification needs.
934059125115
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: SWITCHING;
934055892115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; JESD-30 Code: R-PDSO-G3;
MSC80195
STMicroelectronics' MSC80195 is an NPN BJT transistor with a max fT of 3200 MHz. It has a max IC of 0.3A and Pdiss of 4.9W, suitable for L Band amplifier applications due to its high transition frequency and power dissipation capabilities.
MPS5179
MPS5179 by Onsemi is a NPN RF BJT transistor with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.2W, hFE of 25, and operates up to 150 °C. The package is cylindrical with through-hole terminals and collector-emitter voltage of 12V.
MPSH11RLRM
MPSH11RLRM by Onsemi is an NPN RF BJT with a max fT of 650 MHz, VCEO of 25V, and Ccb of 0.7 pF. Ideal for UHF applications due to its high frequency band capability and cylindrical package style. Operates at up to 150 °C making it suitable for various electronic designs.
START420
START420 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector-emitter voltage of 4.5V, operates in the C band, and comes in a compact rectangular package with gull-wing terminals. Ideal for surface mount designs, it supports efficient signal amplification.
2N3866
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
934063134215
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .035 A; JESD-30 Code: R-PDSO-G3;
2N4260
2N4260 by Texas Instruments is a PNP BJT for RF applications. With hFE of 30, it operates at 200°C with VCE of 15V and IC of 0.03A. Ideal for amplifiers in the UHF band, it has a fT of 1.6MHz and Pd max of 0.2W in a cylindrical package with isolated case connection.
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
HFA3101BZ
Intersil
NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Package Body Material: PLASTIC/EPOXY;
MPSH10RLRE
MPSH10RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp rating (150 °C). The transistor's through-hole package makes it suitable for various cylindrical style designs.
MMBTH81LT1
MMBTH81LT1 by Onsemi is a PNP RF small signal BJT with a max collector-emitter voltage of 20V and a nominal transition frequency of 600MHz. It is commonly used in applications requiring ultra high frequency band performance, such as wireless communication systems.
MPS918RL
MPS918RL by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a max operating temperature of 150 °C. This through-hole transistor has a package style of cylindrical shape with three terminals.
TIS110
TIS110 by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 0.36W and max collector-emitter voltage of 40V, it operates at up to 150°C. Featuring a nominal transition frequency of 350MHz, it is housed in a cylindrical package suitable for RF small signal amplification.
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BFP720H6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .025 A; Terminal Position: DUAL;
BFP740FESDH6327XTSA1
BFP740FESDH6327XTSA1 by Infineon Technologies is an NPN RF BJT with 14 dB power gain, ideal for X Band applications. It features a max operating temperature of 150°C, fT of 47 GHz, and a collector-emitter voltage of 4.2V. Suitable for amplifier circuits requiring high frequency performance in small outline packages.
BFP740H6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 44000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;
BFP740FH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;
BFP780H6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20000 MHz; Maximum Collector Current (IC): .12 A; Terminal Finish: TIN;
BFP720FH6327XTSA1
BFP720FH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for X Band applications. It has a max fT of 45 GHz and can handle a collector-emitter voltage of 4V. This small outline package transistor is ideal for amplifier circuits in high-frequency applications.
BFP740E6327
BFP740E6327 by Infineon is a NPN RF BJT with 19.5 dB power gain, ideal for amplifier applications in C band frequencies. It features Gull Wing terminals, 160 min hFE, and can operate b/w -55 to 150 °C with a max collector-emitter voltage of 4 V.
BFP740E6327HTSA1
BFP740ESD
BFP720FESD
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .03 A;
BFP740F-E6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;
BFP720F-E6433
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .08 W; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON GERMANIUM; Minimum DC Current Gain (hFE): 160;
BFP740F
BFP720ESD
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 43000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .03 A;
BFP720ESDH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 43000 MHz; Maximum Collector Current (IC): .03 A; No. of Elements: 1;
BFP720FESDH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .03 A; Reference Standard: AEC-Q101;
BFP740F-E6433
BFP720F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Power Dissipation (Abs): .08 W; Maximum Collector Current (IC): .025 A;
BFP740
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