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CA3083Z

Renesas Electronics

CA3083Z by Renesas Electronics

CA3083Z by Renesas Electronics is a NPN BJT with 5 elements for switching applications. It operates in the very high frequency band up to 450 MHz, with a max collector-emitter voltage of 15V and collector current of 0.1A. The package style is in-line, with a max power dissipation of 0.5W at 150°C.

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Advanced Electronics

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Corohmni

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AZTECH Wire

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Glotronic Ltd.

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Overview

Unleash the power of seamless RF signal switching with the Renesas Electronics CA3083Z. Renowned for its quality and reliability, this NPN transistor offers exceptional performance in a wide range of applications. With a maximum transition frequency of 450 MHz and a very high-frequency band, this 5-element transistor is designed to deliver top-notch results. Whether you're looking to enhance your electronic projects or streamline your manufacturing processes, the CA3083Z provides unmatched value and efficiency. Upgrade to Renesas Electronics for superior technology that never disappoints.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistors, making them suitable for a variety of environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, allowing for efficient control of electrical signals.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

No. of Terminals: 16

With 16 terminals, this transistor offers flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 0.5 W

Can handle up to 0.5 watts of power dissipation, suitable for a range of low to medium power applications.

Maximum Collector-Emitter Voltage: 15 V

With a maximum voltage rating of 15 volts, this transistor can handle a variety of voltage levels in circuits.

Nominal Transition Frequency (fT): 450 MHz

With a high transition frequency, this transistor is suitable for high-frequency applications such as RF and signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) CA3083Z attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e3

No. of Elements:

5

No. of Terminals:

16

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CA3083Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-591-3561, 5961015913561

NIIN

015913561

Manufacturer Highlights

Renesas Electronics

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