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MPSH81RLRA

Onsemi

MPSH81RLRA by Onsemi

MPSH81RLRA by Onsemi is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 20V, fT of 600MHz, and low 0.85pF capacitance. Ideal for amplifier applications due to its silicon element material and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

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Vyrian

USA . 2,286 parts In-Stock

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Problanco Electronics

Mexico . 6,489 parts In-Stock

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Kulean Microsystems

USA . 1,803 parts In-Stock

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SupplyDigital Components

Austria . 1,522 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 1,082 parts In-Stock

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Corohmni

South Africa . 477 parts In-Stock

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UHIMA Technologies

Türkiye . 348 parts In-Stock

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Overview

Looking to amplify your electronic projects? Look no further than the Onsemi MPSH81RLRA RF Small Signal Bipolar Junction Transistor! Manufactured by Onsemi, a trusted leader in semiconductor technology, this PNP transistor offers high-quality performance and reliability. Ideal for amplifier applications, this transistor boasts a maximum collector-emitter voltage of 20V and a nominal transition frequency of 600 MHz. Its through-hole terminal form and cylindrical package style make it easy to integrate into your designs. Trust Onsemi's expertise and choose the MPSH81RLRA for all your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used for amplification in electronic circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor provides efficient signal amplification with low noise.

Package Shape: ROUND

Round package shape allows for easy installation and compatibility with various mounting methods.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections for the transistor and facilitate easy PCB assembly.

Maximum Collector-Base Capacitance: 0.85 pF

Low collector-base capacitance helps in minimizing signal distortion and improving high-frequency performance.

Maximum Collector-Emitter Voltage: 20 V

With a high collector-emitter voltage, this transistor can handle higher voltage levels in circuits without breakdown.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency allows for high-frequency signal processing, making this transistor suitable for applications requiring fast switching speeds.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH81RLRA attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.85 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH81RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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