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KSC1674YBU

Onsemi

KSC1674YBU by Onsemi

KSC1674YBU by Onsemi is an NPN RF BJT transistor with a max. collector-emitter voltage of 20V and fT of 600MHz. Ideal for amplifier applications, it has a min. hFE of 120 and operates at up to 150°C. Packaged in plastic/epoxy, it features through-hole terminals and a max. power dissipation of 0.25W.

Median Price

$0.044

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,572,301 parts In-Stock

1+ parts

-

100+ parts

$0.037

1k+ parts

$0.031

10k+ parts

$0.028

1,572,301

-

$0.037

$0.031

$0.028

DigiKey

USA . 85,325 parts In-Stock

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-

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$0.050

85,325

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-

-

$0.050

Distributors (In-Stock)

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Vyrian

USA . 1,666 parts In-Stock

1+ parts

$0.030

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-

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1,666

$0.030

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Digiode

USA . 470 parts In-Stock

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$0.031

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470

$0.031

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Chip Stock

USA . 1,447,576 parts In-Stock

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1,447,576

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Distributors (Availability)

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Corphita

USA . 2,410 parts In-Stock

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$0.030

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-

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2,410

$0.030

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Corohmni

South Africa . 227 parts In-Stock

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$0.030

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227

$0.030

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Continental Prestige Electronics

USA . 1,572,319 parts In-Stock

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$0.039

1,572,319

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$0.039

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Perfect Parts

USA . 31,427 parts In-Stock

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31,427

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TANS Electronics

Latvia . 7,531 parts In-Stock

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7,531

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SupplyDigital Components

Austria . 6,000 parts In-Stock

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6,000

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QUARKTWIN TECHNOLOGY LTD

USA . 5,721 parts In-Stock

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Supply Digital

USA . 2,739 parts In-Stock

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2,739

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Problanco Electronics

Mexico . 2,538 parts In-Stock

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2,538

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Kulean Microsystems

USA . 2,364 parts In-Stock

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2,364

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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UHIMA Technologies

Türkiye . 661 parts In-Stock

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661

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Overview

Enhance your electronic projects with the KSC1674YBU by Onsemi, a high-quality RF Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers exceptional performance in amplifier applications, operating in the very high frequency band. With a minimum DC current gain of 120 and a maximum power dissipation of 0.25W, this transistor provides reliability and efficiency. Upgrade your designs with the superior value and benefits of the KSC1674YBU from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and switching applications, making this transistor versatile.

Configuration: SINGLE

Simplified design with a single transistor, making it easy to implement in circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Package Shape: ROUND

The round shape allows for efficient heat dissipation and facilitates easier mounting in circular layouts.

Terminal Form: THROUGH-HOLE

Enables easy through-hole soldering for secure connections in circuit boards.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for applications requiring very high frequency operation, such as communication systems and high-speed data processing.

Maximum Power Dissipation (Abs): 0.25 W

Can handle moderate power levels without overheating, ensuring reliable performance.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides compactness and ease of integration in various electronic devices.

Minimum DC Current Gain (hFE): 120

High minimum DC current gain ensures efficient signal amplification.

Maximum Operating Temperature: 150 °C

Can operate at higher temperatures, suitable for environments where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 20 V

Can withstand relatively high collector-emitter voltages, increasing the voltage margin for safe operation.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and stability in electronic circuits.

Maximum Collector Current (IC): 0.02 A

Capable of handling moderate collector currents, suitable for small signal amplification.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position facilitates efficient board layout and connections in circuit designs.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency allows for reliable performance in high-frequency applications like RF amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC1674YBU attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

120

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1674YBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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