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MPSH81ZL1

Onsemi

MPSH81ZL1 by Onsemi

MPSH81ZL1 by Onsemi is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 20V, fT of 600MHz, and low 0.85pF C-B capacitance. Ideal for amplifier applications due to its silicon element material and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,305 parts In-Stock

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Digiode

USA . 1,192 parts In-Stock

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Kulean Microsystems

USA . 8,017 parts In-Stock

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TANS Electronics

Latvia . 7,578 parts In-Stock

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Problanco Electronics

Mexico . 7,097 parts In-Stock

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SupplyDigital Components

Austria . 3,272 parts In-Stock

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Corphita

USA . 927 parts In-Stock

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UHIMA Technologies

Türkiye . 166 parts In-Stock

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Corohmni

South Africa . 78 parts In-Stock

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Overview

Upgrade your amplifier circuits with the MPSH81ZL1 by Onsemi, a high-quality RF Small Signal BJT transistor that delivers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this PNP transistor offers a single configuration in a round cylindrical package, making it ideal for a wide range of applications. Whether you're designing audio amplifiers or radio frequency circuits, the MPSH81ZL1 provides exceptional value, benefits, and advantages to help you achieve superior results. Trust Onsemi for cutting-edge technology and innovation in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, allowing for easy handling and long-lasting performance.

Polarity or Channel Type: PNP

PNP BJTs are commonly used in amplifiers and switching circuits, offering high voltage gain and low input resistance, making this transistor suitable for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making the transistor easier to use for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers high voltage gain and low noise, making it ideal for audio and radio frequency amplification.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering, promoting efficient assembly and reliable performance in circuit applications.

Terminal Form: THROUGH-HOLE

With through-hole terminals, the transistor can be easily mounted on a printed circuit board, providing secure connections and simplifying the manufacturing process.

Maximum Collector-Base Capacitance: 0.85 pF

The low maximum collector-base capacitance helps in reducing signal distortion and improving high-frequency performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 20 V

The high maximum collector-emitter voltage allows for the transistor to withstand higher voltage levels, ensuring reliable operation in various applications.

Nominal Transition Frequency (fT): 600 MHz

The high nominal transition frequency indicates the transistor's ability to operate at high frequencies, making it suitable for amplification of radio frequency signals with minimal signal degradation.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH81ZL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.85 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH81ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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