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KSC1730Y

Onsemi

KSC1730Y by Onsemi

KSC1730Y by Onsemi is an NPN RF BJT with a max VCEsat of 0.5V, hFE of 120, and fT of 1100MHz. Ideal for amplifier applications in the UHF band due to its high transition frequency and low collector-emitter voltage. Package style is cylindrical with through-hole terminals, making it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,693 parts In-Stock

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Vyrian

USA . 1,961 parts In-Stock

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SupplyDigital Components

Austria . 7,006 parts In-Stock

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Kulean Microsystems

USA . 4,382 parts In-Stock

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TANS Electronics

Latvia . 3,975 parts In-Stock

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Problanco Electronics

Mexico . 3,684 parts In-Stock

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Supply Digital

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Corphita

USA . 2,085 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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UHIMA Technologies

Türkiye . 908 parts In-Stock

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Corohmni

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Overview

Enhance your amplifier designs with the KSC1730Y by Onsemi. Crafted with precision and quality materials, this NPN RF Small Signal BJT offers unmatched performance in the ultra-high frequency band. With a low VCEsat of only 0.5V and a high DC current gain of 120, this transistor delivers exceptional amplification capabilities. Whether you're working on radio frequency applications or high-frequency circuits, the KSC1730Y provides reliability and efficiency, making it the ideal choice for all your project needs. Experience the value and benefits of superior technology with Onsemi's trusted products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, offering high efficiency and low noise.

Configuration: SINGLE

Simplified setup and operation, ideal for basic amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for use in amplification tasks, ensuring optimal performance.

Maximum VCEsat: 0.5 V

Low saturation voltage helps in minimizing power loss and improving efficiency.

Package Shape: ROUND

Compact design and uniform shape allow for easy mounting and integration.

No. of Terminals: 3

Simple three-terminal setup for straightforward connections in circuits.

Maximum Power Dissipation (Abs): 0.25 W

Efficient power handling capability ensures reliable operation without overheating.

Maximum Collector-Base Capacitance: 1.5 pF

Low capacitance helps in minimizing signal distortion and improving high-frequency performance.

Maximum Collector-Emitter Voltage: 15 V

Suitable for low voltage applications, providing protection against voltage spikes.

Maximum Collector Current (IC): 0.05 A

Sufficient current rating for small signal applications, ensuring reliable operation.

Nominal Transition Frequency (fT): 1100 MHz

High transition frequency results in improved frequency response and performance in high-frequency circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC1730Y attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

120

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

KSC1730Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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