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KSC1674R-C

Onsemi

KSC1674R-C by Onsemi

Onsemi's KSC1674R-C is an NPN BJT for RF applications. It features a VCEsat of 0.3V, hFE of 40, and fT of 600MHz. Ideal for ultra-high frequency amplification in through-hole packages with 3 terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,219 parts In-Stock

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Digiode

USA . 756 parts In-Stock

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756

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TANS Electronics

Latvia . 6,478 parts In-Stock

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Problanco Electronics

Mexico . 5,500 parts In-Stock

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Corphita

USA . 1,463 parts In-Stock

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SupplyDigital Components

Austria . 1,321 parts In-Stock

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UHIMA Technologies

Türkiye . 834 parts In-Stock

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Corohmni

South Africa . 389 parts In-Stock

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Kulean Microsystems

USA . 148 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the KSC1674R-C by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch RF Small Signal Bipolar Junction Transistors that cater to a wide range of applications, including amplifiers. With its NPN configuration and ultra-high frequency band capabilities, this transistor offers customers superior value and benefits. Trust in the quality and advantages of Onsemi products, and elevate your projects to new heights with the KSC1674R-C.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and resistant to physical damage.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Maximum VCEsat: 0.3 V

Low VCEsat value indicates high efficiency in switching applications, reducing power loss and improving overall performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency operation, enabling this transistor to be used in high-speed applications with minimal signal distortion.

Minimum DC Current Gain (hFE): 40

A higher DC current gain allows for better amplification of small signals, making this transistor suitable for signal amplification tasks.

Maximum Collector-Emitter Voltage: 20 V

High collector-emitter voltage rating provides flexibility in circuit design and protects the transistor from voltage spikes.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency allows for high-frequency signal amplification, making this transistor ideal for use in radio frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC1674R-C attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.2 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

KSC1674R-C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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