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KSC1393R

Onsemi

KSC1393R by Onsemi

KSC1393R by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, DC current gain of 40, and operates in the very high frequency band up to 700 MHz. This transistor has a max collector-emitter voltage of 30V and can handle a max power dissipation of 0.25W at an ambient temperature of 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,991 parts In-Stock

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Digiode

USA . 1,125 parts In-Stock

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Problanco Electronics

Mexico . 6,521 parts In-Stock

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Kulean Microsystems

USA . 3,702 parts In-Stock

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TANS Electronics

Latvia . 2,744 parts In-Stock

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Corphita

USA . 2,339 parts In-Stock

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Supply Digital

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SupplyDigital Components

Austria . 1,495 parts In-Stock

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UHIMA Technologies

Türkiye . 591 parts In-Stock

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Corohmni

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Overview

Unleash the power of innovation with the KSC1393R by Onsemi, a high-quality RF Small Signal BJT that offers unparalleled performance and reliability. Manufactured by industry leaders, Onsemi, this NPN transistor is designed for amplifier applications in the very high-frequency band. With a minimum power gain of 20dB and a nominal transition frequency of 700MHz, this transistor delivers exceptional results. Experience seamless integration and superior functionality with the KSC1393R, providing customers with the value, benefits, and advantages they need to stay ahead in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration due to the single transistor configuration.

Minimum Power Gain (Gp): 20 dB

Ensures a minimum power gain of 20 dB, making it suitable for amplification tasks.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into circular PCB designs.

Terminal Form: THROUGH-HOLE

Enables easy through-hole soldering, providing a secure and reliable connection in the circuit.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Capable of operating in the very high-frequency band, suitable for applications requiring high-speed signal processing.

No. of Terminals: 3

Three terminals allow for easy connectivity in the circuit configuration.

Maximum Power Dissipation (Abs): 0.25 W

Can handle maximum power dissipation of 0.25 W, ensuring reliable performance under high-power conditions.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compact size and easy integration into various electronic devices.

Maximum Power Dissipation Ambient: 0.25 W

Designed to dissipate heat efficiently in ambient conditions, ensuring stable operation.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures sufficient amplification capability in the circuit.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures up to 150 °C, suitable for demanding applications.

Maximum Collector-Base Capacitance: 0.5 pF

Low collector-base capacitance of 0.5 pF minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 30 V

Handles a maximum collector-emitter voltage of 30 V, suitable for various voltage requirements in the circuit.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics, ensuring reliability and stability in operation.

Maximum Collector Current (IC): 0.02 A

Capable of handling a maximum collector current of 0.02 A, suitable for low-power applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering, ensuring secure connections.

Nominal Transition Frequency (fT): 700 MHz

High nominal transition frequency of 700 MHz enables high-speed signal processing and amplification tasks.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC1393R attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.5 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

20 dB

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1393R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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