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TIS62A

Texas Instruments

TIS62A by Texas Instruments

TIS62A by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.5W, fT of 500MHz, and hFE min of 20. It is used in amplifier applications due to its very high frequency band capability and max. collector-emitter voltage of 12V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,905 parts In-Stock

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5,905

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Digiode

USA . 3,483 parts In-Stock

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3,483

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Distributors (Availability)

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Parana Technologies

USA . 123 parts In-Stock

1+ parts

$0.315

100+ parts

-

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$1.553

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123

$0.315

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$1.553

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DigiPath Technology Company

USA . 1,175 parts In-Stock

1+ parts

$0.347

100+ parts

$0.319

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1,175

$0.347

$0.319

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ChromeModa Solutions

Germany . 6,294 parts In-Stock

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$0.354

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$0.290

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6,294

$0.354

$0.290

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IDEA Electronic Components Group

UK . 1,043 parts In-Stock

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$0.354

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$0.319

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1,043

$0.354

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$0.319

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AZTECH Wire

Italy . 717 parts In-Stock

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$14.681

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717

$14.681

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Ampacity Inc.

Singapore . 375 parts In-Stock

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$27.050

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375

$27.050

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One Stop Electronics

USA . 854 parts In-Stock

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$47.050

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854

$47.050

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Semicontronic

India . 1,155 parts In-Stock

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$58.050

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$56.599

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$56.308

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1,155

$58.050

$56.599

$56.308

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Corphita

USA . 3,816 parts In-Stock

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Corohmni

South Africa . 408 parts In-Stock

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Overview

Elevate your RF signal amplification with the TIS62A by Texas Instruments. Crafted with precision and expertise, this NPN bipolar junction transistor offers unparalleled performance in the very high-frequency band. Ideal for amplifier applications, this transistor boasts a cylindrical package shape and a maximum operating temperature of 150°C. With a minimum DC current gain of 20 and a nominal transition frequency of 500 MHz, the TIS62A delivers exceptional power dissipation and collector voltage capabilities. Experience top-notch quality and reliability with Texas Instruments, making the TIS62A the ultimate choice for your RF small signal needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification, making this transistor suitable for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance in amplification tasks.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Ideal for applications that require operation in the very high frequency band, providing reliable performance in high-frequency circuits.

Maximum Power Dissipation (Abs): 0.5 W

Can handle up to 0.5 watts of power dissipation, making it suitable for applications where power dissipation is a concern.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, it can withstand high-temperature environments without compromising performance.

Nominal Transition Frequency (fT): 500 MHz

With a high transition frequency of 500 MHz, it can deliver fast switching speeds for efficient signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) TIS62A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.3 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIS62A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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