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MPS3563RL1

Onsemi

MPS3563RL1 by Onsemi

MPS3563RL1 by Onsemi is an NPN RF BJT with 600MHz fT, 12V VCEO, and 1.7pF CCB. Ideal for amplifier applications in the UHF band due to its high frequency capability and low collector-base capacitance. Packaged in a cylindrical shape with through-hole terminals, it operates up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 490 parts In-Stock

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490

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Digiode

USA . 440 parts In-Stock

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440

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TANS Electronics

Latvia . 7,784 parts In-Stock

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7,784

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Problanco Electronics

Mexico . 7,274 parts In-Stock

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SupplyDigital Components

Austria . 5,615 parts In-Stock

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Kulean Microsystems

USA . 4,937 parts In-Stock

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Corphita

USA . 2,245 parts In-Stock

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UHIMA Technologies

Türkiye . 933 parts In-Stock

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933

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Corohmni

South Africa . 253 parts In-Stock

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Overview

Unleash the power of innovation with the MPS3563RL1 by Onsemi, a top-quality RF Small Signal Bipolar Junction Transistor designed to amplify signals with precision and efficiency. With Onsemi's reputation for excellence in semiconductor manufacturing, this NPN transistor offers unparalleled performance in applications such as amplifiers within the ultra-high frequency band. Experience enhanced reliability and superior signal processing capabilities with this cutting-edge product, providing customers with exceptional value and unmatched advantages in their electronic projects. Elevate your designs with the MPS3563RL1 and discover the endless possibilities it brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and robust material ensures long-lasting performance

Polarity or Channel Type: NPN

Commonly used and well-understood type of transistor

Configuration: SINGLE

Simplifies circuit design and application

Transistor Application: AMPLIFIER

Specifically designed for amplifying signals

Package Shape: ROUND

Facilitates easy installation and mounting

Terminal Form: THROUGH-HOLE

Allows for secure soldering and connection

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications

No. of Terminals: 3

Simple and easy to connect in circuits

Package Style (Meter): CYLINDRICAL

Space-efficient design for compact applications

Maximum Operating Temperature: 150 °C

Can withstand high temperatures for reliable operation

Maximum Collector-Base Capacitance: 1.7 pF

Low capacitance for improved performance in high-frequency applications

Maximum Collector-Emitter Voltage: 12 V

Sufficient voltage rating for various applications

Transistor Element Material: SILICON

Silicon has good electrical properties for transistor operation

Maximum Collector Current (IC): 0.05 A

Adequate collector current rating for many applications

Terminal Finish: TIN LEAD

Provides good solderability for reliable connections

Terminal Position: BOTTOM

Easy to integrate into circuit boards

Nominal Transition Frequency (fT): 600 MHz

High frequency capability for efficient signal amplification

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS3563RL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS3563RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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