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MPS3563RLRA

Onsemi

MPS3563RLRA by Onsemi

MPS3563RLRA by Onsemi is an NPN BJT transistor with a max. collector-emitter voltage of 12V, ideal for amplifier applications in the ultra-high frequency band. It has a min. DC current gain of 20 and operates at up to 150 °C, with a max. power dissipation of 0.625W in a cylindrical package style.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

6,000

-

$0.053

$0.044

$0.039

Verical

USA . 6,000 parts In-Stock

1+ parts

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$0.066

6,000

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$0.066

Distributors (In-Stock)

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Digiode

USA . 99 parts In-Stock

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$0.041

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99

$0.041

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Vyrian

USA . 1,476 parts In-Stock

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$0.043

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1,476

$0.043

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DigiKey Marketplace

USA . 6,000 parts In-Stock

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Sea View Technologies

USA . 3,732 parts In-Stock

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3,732

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Bristol Electronics

USA . 3,732 parts In-Stock

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3,732

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Mil-Aero Solutions, Inc.

USA . 2,194 parts In-Stock

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2,194

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Distributors (Availability)

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Corphita

USA . 1,720 parts In-Stock

1+ parts

$0.039

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1,720

$0.039

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Corohmni

South Africa . 150 parts In-Stock

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$0.043

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150

$0.043

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QUARKTWIN TECHNOLOGY LTD

USA . 8,519 parts In-Stock

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8,519

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Kulean Microsystems

USA . 6,694 parts In-Stock

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TANS Electronics

Latvia . 6,432 parts In-Stock

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SupplyDigital Components

Austria . 5,660 parts In-Stock

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Problanco Electronics

Mexico . 3,078 parts In-Stock

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UHIMA Technologies

Türkiye . 878 parts In-Stock

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Overview

Unlock the potential of your RF applications with the MPS3563RLRA by Onsemi. Manufactured with precision and expertise, this NPN transistor offers unrivaled performance and reliability in amplifier circuits within the ultra-high frequency band. Its unique design and high DC current gain ensure optimal signal amplification, while its durable package body material guarantees long-lasting functionality. Trust Onsemi to deliver quality components that exceed expectations. Elevate your projects with the MPS3563RLRA today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, making this product versatile.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating.

Nominal Transition Frequency (fT): 1500 MHz

A high transition frequency means that this transistor can operate at high frequencies, making it suitable for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS3563RLRA attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS3563RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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