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MPSH11RL

Onsemi

MPSH11RL by Onsemi

MPSH11RL by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp. tolerance (150 °C). The transistor, in a cylindrical package, has 3 terminals and silicon element material for optimal performance.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,836 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 5,840 parts In-Stock

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SupplyDigital Components

Austria . 3,283 parts In-Stock

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TANS Electronics

Latvia . 1,932 parts In-Stock

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Corphita

USA . 1,932 parts In-Stock

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Problanco Electronics

Mexico . 1,412 parts In-Stock

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UHIMA Technologies

Türkiye . 802 parts In-Stock

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Corohmni

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Overview

Looking for a reliable RF Small Signal Bipolar Junction Transistor? Look no further than the MPSH11RL by Onsemi. Known for their high-quality products, Onsemi delivers top-notch performance and durability. With applications in ultra-high-frequency bands, this NPN transistor offers customers unparalleled value and benefits. Trust Onsemi's reputation for excellence and choose the MPSH11RL for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into NPN transistor circuits, offering versatility and compatibility.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easy implementation in various electronic systems.

Package Shape: ROUND

The round package shape is space-efficient and easy to mount, making it ideal for compact electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and reliable performance in through-hole PCB applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

The ultra-high frequency band capability allows for high-speed signal amplification and processing, making it suitable for advanced communication systems.

No. of Terminals: 3

The three terminals provide versatile connection options and enable the transistor to be easily integrated into various circuit layouts.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is aesthetically pleasing and offers good thermal performance for reliable operation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance of 150 °C ensures stable performance in demanding environmental conditions.

Maximum Collector-Base Capacitance: 0.7 pF

The low maximum collector-base capacitance of 0.7 pF minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 25 V

The high maximum collector-emitter voltage rating of 25V provides a wide voltage margin for safe and reliable operation in various applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high reliability, temperature stability, and compatibility with standard semiconductor processes.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers excellent solderability and corrosion resistance, ensuring secure connections and long-term reliability.

Terminal Position: BOTTOM

The bottom terminal position is convenient for PCB mounting and allows for easy integration into existing electronic designs.

Nominal Transition Frequency (fT): 650 MHz

The high nominal transition frequency of 650 MHz enables high-speed signal amplification and processing, making the transistor suitable for advanced RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH11RL attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH11RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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