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BSX93

STMicroelectronics

BSX93 by STMicroelectronics

BSX93 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36W, operates up to 200 °C, and has a nominal transition frequency of 650MHz. Ideal for compact electronic circuits requiring efficient signal control.

Median Price

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Lifecycle Status

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9

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1k+

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Anansix

USA . 2,659 parts In-Stock

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Digiode

USA . 1,468 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 333 parts In-Stock

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Vyrian

USA . 174 parts In-Stock

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Pegasus Components GmbH

Germany . 109 parts In-Stock

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GES GmbH

Germany . 88 parts In-Stock

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Halfin

Belgium . 36 parts In-Stock

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ECAB

Sweden . 31 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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IDEA Electronic Components Group

UK . 1,881 parts In-Stock

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$1.390

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$1.251

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$1.390

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MKK Technologies

India . 267 parts In-Stock

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$2.614

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DigiPath Technology Company

USA . 267 parts In-Stock

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Northwest PG Solutions

USA . 2,040 parts In-Stock

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Corphita

USA . 335 parts In-Stock

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Parana Technologies

USA . 242 parts In-Stock

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Native Components

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Assy Fe

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Overview

Unlock exceptional performance with the BSX93 from STMicroelectronics, a premier choice for RF applications. Designed with quality and reliability in mind, this NPN transistor excels in switching tasks, offering robust power handling and efficiency. With a commitment to innovation, STMicroelectronics ensures that each BSX93 delivers superior value, making it ideal for everything from consumer electronics to industrial solutions. Elevate your projects with components that promise durability and peak performance.

Feature Benefit Bullets

Package Body Material: METAL

Using metal for the package body enhances heat dissipation and durability, making this transistor reliable for high-performance applications.

Polarity or Channel Type: NPN

The NPN configuration is widely used in many electronic applications, providing efficient switching and amplifying capabilities.

Configuration: SINGLE

A single configuration simplifies circuit design, reducing space and complexity in electronic systems.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor supports high-speed operations essential for modern electronic circuits.

Package Shape: ROUND

The round package shape aids in uniform thermal performance and is compatible with various circuit layouts.

Terminal Form: WIRE

Wire terminals provide flexibility in mounting options and easy integration into custom circuit designs.

No. of Terminals: 3

Three terminals allow for a straightforward connection that supports efficient signal transfer and control.

Maximum Power Dissipation (Abs): 0.36 W

With a power dissipation of 0.36 W, this transistor can operate efficiently without overheating in moderate power applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style improves mechanical stability and supports thermal management in compact spaces.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures effective amplification of input signals, making it suitable for low-power applications.

Maximum Operating Temperature: 200 °C

Operating at temperatures up to 200 °C ensures reliability and performance in high-temperature environments.

Maximum Collector-Base Capacitance: 4 pF

Low collector-base capacitance enables faster switching speeds, ideal for RF applications and high-frequency circuits.

Maximum Collector-Emitter Voltage: 15 V

The threshold of 15 V provides adequate headroom for a range of applications while ensuring safe operation limits.

Transistor Element Material: SILICON

Silicon as the element material offers excellent semiconductor properties, contributing to the transistor's performance and reliability.

Maximum Collector Current (IC): 0.15 A

Supporting a maximum collector current of 0.15 A makes this transistor suitable for various small signal applications.

Terminal Finish: TIN LEAD

The tin-lead finish ensures good solderability and long-term reliability in electronic connections.

Terminal Position: BOTTOM

Bottom terminal positioning optimizes PCB layout and allows for efficient space utilization in dense circuit designs.

Nominal Transition Frequency (fT): 650 MHz

With a transition frequency of 650 MHz, this transistor is ideal for RF applications, providing high-speed signal processing capabilities.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BSX93 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BSX93 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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