Loading...

MMPQ2369G

Onsemi

MMPQ2369G by Onsemi

MMPQ2369G by Onsemi is a NPN BJT with 4 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 15V, fT of 550MHz, and IC of 0.5A. The transistor is surface mountable with a small outline package and Gull Wing terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,316 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,316

-

-

-

-

Digiode

USA . 2,039 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,039

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 4,351 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,351

-

-

-

-

Kulean Microsystems

USA . 3,383 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,383

-

-

-

-

Problanco Electronics

Mexico . 2,996 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,996

-

-

-

-

SupplyDigital Components

Austria . 2,886 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,886

-

-

-

-

Corphita

USA . 1,692 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,692

-

-

-

-

Corohmni

South Africa . 430 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

430

-

-

-

-

UHIMA Technologies

Türkiye . 421 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

421

-

-

-

-

Overview

Unleash the power of cutting-edge technology with the MMPQ2369G by Onsemi. Designed with precision and expertise, this RF Small Signal Bipolar Junction Transistor offers unparalleled performance in amplifier applications. With a sleek design and high-quality components, this NPN transistor boasts a maximum collector-emitter voltage of 15V and a nominal transition frequency of 550MHz. Whether you're a seasoned professional or a tech enthusiast, the advantages of this product are clear - superior functionality, reliability, and efficiency. Elevate your projects to new heights with the MMPQ2369G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers durability and reliable performance, making this product suitable for various applications.

Polarity or Channel Type: NPN

NPN type allows for easy integration in circuits and provides efficient signal amplification.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification tasks.

Surface Mount: YES

Surface mount capability provides ease of installation and saves space on PCBs.

Maximum Collector-Base Capacitance: 4 pF

Low collector-base capacitance enhances high-frequency performance and helps in minimizing signal distortion.

Nominal Transition Frequency (fT): 550 MHz

High transition frequency allows for fast switching speeds and efficient signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMPQ2369G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

JESD-30 Code:

R-PDSO-G16

No. of Elements:

4

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMPQ2369G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7