Loading...

BFR92PE6327XT

Infineon Technologies

BFR92PE6327XT by Infineon Technologies

BFR92PE6327XT by Infineon Technologies is an NPN RF BJT transistor with a max fT of 5000 MHz. It has a collector-emitter voltage of 15V and can handle a max collector current of 0.045A, making it suitable for switching applications in the L band frequency range. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.060

6,000

-

-

-

$0.060

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 27,932 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,932

-

-

-

-

Vyrian

USA . 5,687 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,687

-

-

-

-

Digiode

USA . 919 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

919

-

-

-

-

Nova Conductors

Japan . 99 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

99

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 5,714 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

5,714

$0.051

-

-

-

Modulus Dynamics

Lithuania . 17,180 parts In-Stock

1+ parts

$0.866

100+ parts

$0.831

1k+ parts

$0.797

10k+ parts

-

17,180

$0.866

$0.831

$0.797

-

Aztec Data Supply Inc.

USA . 431 parts In-Stock

1+ parts

$1.194

100+ parts

-

1k+ parts

-

10k+ parts

-

431

$1.194

-

-

-

Corohmni

South Africa . 316 parts In-Stock

1+ parts

$1.666

100+ parts

-

1k+ parts

-

10k+ parts

-

316

$1.666

-

-

-

Continental Prestige Electronics

USA . 5,562 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,562

-

-

-

-

Argo Parts USA

USA . 2,711 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,711

-

-

-

-

Bastille Electronics

Australia . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Corphita

USA . 225 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

225

-

-

-

-

Overview

Unlock the potential of your RF applications with the BFR92PE6327XT from Infineon Technologies. This NPN transistor offers unmatched quality and reliability, perfect for switching in high-frequency L Band circuits. Its sleek small outline package design and dual terminal position make it easy to integrate into your projects. Trust Infineon's expertise in RF small signal transistors and experience seamless performance like never before. Upgrade your designs today and discover the difference Infineon can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good thermal and electrical insulation, making the transistor more reliable and durable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital and analog circuits, offering versatility in applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, reducing complexity and improving overall performance.

Transistor Application: SWITCHING

Designed for switching applications, ensuring fast response times and efficient operation in various electronic devices.

Surface Mount: YES

Surface mount compatibility allows for easy and convenient PCB assembly, saving space and reducing production costs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of PCB real estate and enables easy integration into compact electronic products.

No. of Terminals: 3

Three terminals provide versatile connectivity options, allowing for a range of circuit configurations and applications.

Maximum Collector-Base Capacitance: 0.55 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance in amplification and switching circuits.

Maximum Collector-Emitter Voltage: 15 V

With a high collector-emitter voltage rating, the transistor can handle larger voltage swings, ensuring reliable operation in various environments.

Transistor Element Material: SILICON

Silicon material offers excellent thermal conductivity and electrical performance, ensuring high reliability and consistent operation over a wide temperature range.

Maximum Collector Current (IC): 0.045 A

With a maximum collector current rating of 0.045 A, this transistor can handle moderate power loads, suitable for a wide range of applications.

Terminal Finish: MATTE TIN

Matte tin finish provides a durable and reliable terminal connection, ensuring good contact and reducing the risk of signal loss or interference.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures high-quality and reliable performance in automotive and other demanding operating conditions.

Nominal Transition Frequency (fT): 5000 MHz

High nominal transition frequency allows for efficient signal amplification and switching at very high frequencies, ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR92PE6327XT attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.55 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR92PE6327XT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20