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BFT25A,215

NXP Semiconductors

BFT25A,215 by NXP Semiconductors

NXP Semiconductors' BFT25A,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 5000 MHz and hFE of 50, suitable for amplifier applications. The transistor has a max power dissipation of 0.032 W and can handle a collector-emitter voltage of 5V.

Median Price

$0.262

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Nova Conductors

Japan . 700 parts In-Stock

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Digiode

USA . 4,383 parts In-Stock

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Vyrian

USA . 3,784 parts In-Stock

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Semtec, LLC

USA . 989 parts In-Stock

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Anansix

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Velocity Electronics

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VNN

France . 50 parts In-Stock

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Cyclops Electronics Ltd

UK . 12 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 2,789 parts In-Stock

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$0.262

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$0.256

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Argo Parts USA

USA . 2,675 parts In-Stock

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$0.262

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$0.254

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Bastille Electronics

Australia . 43 parts In-Stock

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$0.262

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$0.249

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$0.236

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$0.233

43

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Aztec Data Supply Inc.

USA . 303 parts In-Stock

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Corohmni

South Africa . 644 parts In-Stock

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Advanced Electronics

New Zealand . 3,723 parts In-Stock

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$1.341

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$1.209

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AZTECH Wire

Italy . 539 parts In-Stock

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$15.710

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Ampacity Inc.

Singapore . 1,493 parts In-Stock

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$42.050

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One Stop Electronics

USA . 703 parts In-Stock

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$44.050

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QUARKTWIN TECHNOLOGY LTD

USA . 25,819 parts In-Stock

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Perfect Parts

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UNI Independent Distributors

Spain . 2,560 parts In-Stock

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iodParts Technologies Inc.

India . 900 parts In-Stock

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Corphita

USA . 501 parts In-Stock

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Microchip USA

USA . 300 parts In-Stock

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Overview

Elevate your RF signal amplification with the BFT25A,215 by NXP Semiconductors. Crafted with precision and expertise, this NPN transistor is designed for optimal performance in L Band applications. With a small outline package and gull wing terminals, it offers superior quality and reliability. Whether you're looking to amplify signals or enhance communication systems, this transistor delivers unmatched value and efficiency. Trust NXP Semiconductors to elevate your projects to new heights with the BFT25A,215.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides robustness and durability, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, enhancing ease of use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving space and improving manufacturability.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance ensures reliable performance under varying environmental conditions.

Nominal Transition Frequency (fT): 5000 MHz

High nominal transition frequency allows for high-speed operation, ideal for applications requiring fast signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFT25A,215 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.45 pF

Maximum Collector-Emitter Voltage:

5 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.032 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

CECC

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFT25A,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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