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BFR92A,215

NXP Semiconductors

BFR92A,215 by NXP Semiconductors

NXP Semiconductors' BFR92A,215 is a NPN RF BJT transistor with 5000 MHz fT. It has a max power dissipation of 0.35 W and operates up to 175°C. Ideal for L Band applications, this transistor offers high gain (hFE=40) and low collector current (IC=0.025 A).

Median Price

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Lifecycle Status

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9

In-Stock Inventory

1k+

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Vyrian

USA . 6,662 parts In-Stock

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Rebound Electronics

UK . 796 parts In-Stock

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Ashlea Components Ltd

UK . 795 parts In-Stock

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ComSIT Distribution GmbH

Germany . 500 parts In-Stock

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ComSIT USA

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Digiode

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Anansix

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Nova Conductors

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Aztec Data Supply Inc.

USA . 3,243 parts In-Stock

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$0.530

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Corohmni

South Africa . 254 parts In-Stock

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Semicontronic

India . 1,520 parts In-Stock

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$14.674

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AZTECH Wire

Italy . 474 parts In-Stock

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One Stop Electronics

USA . 1,142 parts In-Stock

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Ampacity Inc.

Singapore . 1,630 parts In-Stock

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Perfect Parts

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UNI Independent Distributors

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Corphita

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Continental Prestige Electronics

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Argo Parts USA

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Microchip USA

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Enhance your amplifier designs with the high-quality BFR92A,215 RF Small Signal Bipolar Junction Transistor from NXP Semiconductors. Known for their top-notch products, NXP Semiconductors delivers reliable and efficient solutions for a wide range of applications. The BFR92A,215 offers exceptional performance in the L Band frequency range, making it ideal for amplification tasks. With its NPN polarity and small outline package style, this transistor provides excellent power dissipation and high transition frequency. Elevate your projects with the BFR92A,215 and experience unmatched value and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and thermal stability, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, providing high current gain and fast switching speeds.

Configuration: SINGLE

Single configuration makes it easy to integrate into circuits and simplifies the design process.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, providing high voltage and current gain for signal amplification.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Package Shape: RECTANGULAR

Rectangular shape makes it compatible with standard PCB layouts and allows for easy placement on the board.

Terminal Form: GULL WING

Gull wing terminals provide mechanical strength and secure solder joints, ensuring reliable connections.

Highest Frequency Band: L BAND

Designed for applications in the L band frequency range, suitable for various RF signal processing tasks.

No. of Terminals: 3

3 terminals provide easy connection to external components and enable versatile circuit design.

Maximum Power Dissipation (Abs): 0.35 W

High maximum power dissipation rating allows the transistor to handle higher power levels without overheating.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR92A,215 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

CECC

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR92A,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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