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BF240RL

Onsemi

BF240RL by Onsemi

BF240RL by Onsemi is a NPN BJT transistor with 40V VCEO, 0.025A IC, and 600MHz fT. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance of 0.34pF. The through-hole package style makes it suitable for various RF small signal designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,058 parts In-Stock

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Digiode

USA . 1,049 parts In-Stock

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Kulean Microsystems

USA . 7,256 parts In-Stock

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TANS Electronics

Latvia . 5,799 parts In-Stock

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SupplyDigital Components

Austria . 2,219 parts In-Stock

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Problanco Electronics

Mexico . 1,809 parts In-Stock

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Native Components

USA . 762 parts In-Stock

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Corphita

USA . 504 parts In-Stock

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Corohmni

South Africa . 497 parts In-Stock

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UHIMA Technologies

Türkiye . 124 parts In-Stock

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Northwest PG Solutions

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Overview

Unleash the power of innovation with the BF240RL by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality RF Small Signal Bipolar Junction Transistors that are perfect for applications like amplifiers. With its NPN polarity and single configuration, this transistor offers exceptional performance and reliability. The plastic/epoxy package ensures durability while the cylindrical shape makes installation a breeze. Elevate your projects with the BF240RL and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Simplified design with single configuration for ease of use in circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance in such circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections, making it easier to integrate into circuits.

Maximum Collector-Emitter Voltage: 40 V

Ability to handle high voltage levels without breakdown, suitable for various applications requiring higher voltage amplification.

Maximum Collector Current (IC): 0.025 A

Capable of handling high collector current, making it suitable for applications requiring higher current amplification.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency allows for faster switching speeds, making it suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF240RL attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.34 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF240RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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