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BF240RL1

Onsemi

BF240RL1 by Onsemi

The Onsemi BF240RL1 is an NPN RF BJT transistor with a max collector-emitter voltage of 40V and fT of 600MHz. Ideal for amplifier applications, it has a max collector current of 0.025A and low capacitance at 0.34pF. The through-hole package style makes it suitable for various electronic designs.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 15,193 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

15,193

-

$0.092

$0.077

$0.068

DigiKey

USA . 15,193 parts In-Stock

1+ parts

-

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$0.120

15,193

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$0.120

Verical

USA . 15,193 parts In-Stock

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-

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$0.086

15,193

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$0.086

Distributors (In-Stock)

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Digiode

USA . 580 parts In-Stock

1+ parts

$0.072

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-

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580

$0.072

-

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Vyrian

USA . 644 parts In-Stock

1+ parts

$0.076

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644

$0.076

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Distributors (Availability)

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Corphita

USA . 2,016 parts In-Stock

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$0.068

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-

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2,016

$0.068

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Corohmni

South Africa . 304 parts In-Stock

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$0.076

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304

$0.076

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Continental Prestige Electronics

USA . 15,238 parts In-Stock

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$0.063

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15,238

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$0.063

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Kulean Microsystems

USA . 7,432 parts In-Stock

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7,432

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Problanco Electronics

Mexico . 7,010 parts In-Stock

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TANS Electronics

Latvia . 6,919 parts In-Stock

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SupplyDigital Components

Austria . 5,150 parts In-Stock

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Northwest PG Solutions

USA . 1,017 parts In-Stock

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Native Components

USA . 859 parts In-Stock

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UHIMA Technologies

Türkiye . 88 parts In-Stock

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Overview

Enhance your amplifier projects with the BF240RL1 by Onsemi, a top-quality RF small signal BJT that delivers exceptional performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor offers a multitude of applications in amplifier circuits, ensuring clear and powerful sound output. With its durable plastic/epoxy package and high transition frequency of 600 MHz, the BF240RL1 is a valuable addition to any electronics project, providing customers with unmatched value and benefits. Experience superior quality and performance with the BF240RL1 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides good protection and durability for the transistor, making it reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification tasks.

Package Shape: ROUND

The round package shape contributes to better thermal dissipation and ease of mounting, enhancing the overall performance of the transistor.

Maximum Collector-Base Capacitance: 0.34 pF

Low collector-base capacitance helps in reducing signal distortion and improving high-frequency performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 40 V

With a high collector-emitter voltage rating, this transistor can handle higher voltage levels without breakdown, ensuring reliability in various applications.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and electrical properties, making it a common and reliable choice for transistor elements.

Maximum Collector Current (IC): 0.025 A

The maximum collector current rating of 0.025 A allows for handling moderate current levels, suitable for various amplifier applications.

Terminal Finish: TIN LEAD

Tin lead finish on the terminals ensures good solderability and electrical conductivity, facilitating easy integration into electronic circuits.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency of 600 MHz enables the transistor to amplify signals at high frequencies with minimal distortion, making it ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF240RL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.34 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF240RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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