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START499ETR

STMicroelectronics

START499ETR by STMicroelectronics

START499ETR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.6 W, operates up to 150 °C, and supports frequencies in the C band with a transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

R&J Components

USA . 12,000 parts In-Stock

1+ parts

-

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1k+ parts

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12,000

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-

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Vyrian

USA . 8,148 parts In-Stock

1+ parts

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-

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8,148

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Inventory MP

USA . 4,245 parts In-Stock

1+ parts

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4,245

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Bristol Electronics

USA . 4,245 parts In-Stock

1+ parts

-

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4,245

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Digiode

USA . 2,029 parts In-Stock

1+ parts

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2,029

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Anansix

USA . 299 parts In-Stock

1+ parts

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299

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Cogito LLC

Ukraine . 68 parts In-Stock

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68

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,249 parts In-Stock

1+ parts

$0.569

100+ parts

-

1k+ parts

$0.513

10k+ parts

-

1,249

$0.569

-

$0.513

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MKK Technologies

India . 1,108 parts In-Stock

1+ parts

$1.071

100+ parts

-

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1,108

$1.071

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DigiPath Technology Company

USA . 1,108 parts In-Stock

1+ parts

$1.071

100+ parts

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1,108

$1.071

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Ampacity Inc.

Singapore . 719 parts In-Stock

1+ parts

$18.050

100+ parts

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719

$18.050

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AZTECH Wire

Italy . 1,095 parts In-Stock

1+ parts

$18.910

100+ parts

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1,095

$18.910

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Component Stockers USA

USA . 780 parts In-Stock

1+ parts

$99.990

100+ parts

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780

$99.990

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Perfect Parts

USA . 17,865 parts In-Stock

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17,865

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Corphita

USA . 2,043 parts In-Stock

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2,043

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Parana Technologies

USA . 1,763 parts In-Stock

1+ parts

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100+ parts

$0.681

1k+ parts

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1,763

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$0.681

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Overview

Elevate your electronic designs with the START499ETR from STMicroelectronics, a trusted leader in semiconductor innovation. This NPN RF small signal BJT delivers exceptional performance as an amplifier, ensuring reliability and efficiency in various applications. With a compact design and robust temperature tolerance, it seamlessly integrates into your projects, enhancing signal quality while minimizing power loss. Choose START499ETR to unlock unmatched value and performance in your next creation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials provides durability and protection against environmental factors, making this product suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, providing a reliable choice for various electronic circuits.

Configuration: SINGLE

A single configuration simplifies integration into circuits, making it easy to design compact and efficient systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifying signals, this transistor is well-suited for audio and RF applications, enhancing performance vitality.

Surface Mount: YES

Surface mount technology allows for reduced PCB space and improved performance through better thermal management.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on circuit boards, facilitating easier handling and installation.

Terminal Form: GULL WING

Gull wing terminals provide stable soldering and efficient heat dissipation, enhancing reliability in high-performance applications.

Highest Frequency Band: C BAND

Operating in the C band ensures compatibility with many wireless communication applications, making it ideal for RF circuits.

No. of Terminals: 4

Four terminals offer flexibility in circuit design, allowing for more complex configurations and improved functionality.

Maximum Power Dissipation (Abs): 0.6 W

A maximum power dissipation of 0.6 W allows for robust operation in amplifying applications without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package is space-efficient, making it perfect for compact devices and optimized layouts.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures reliable performance in demanding environments, enhancing durability.

Maximum Collector-Emitter Voltage: 4.5 V

With a maximum collector-emitter voltage of 4.5 V, this transistor is suitable for low-voltage applications while maintaining performance.

Transistor Element Material: SILICON

Silicon as the material provides good thermal conductivity and efficiency, making it a standard choice for performance-oriented applications.

Maximum Collector Current (IC): 0.6 A

The ability to handle up to 0.6 A of collector current allows this transistor to drive higher loads, making it versatile for various uses.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring long-term reliability in various conditions.

Terminal Position: DUAL

Dual terminal positioning enhances layout flexibility, enabling better routing on PCBs and more efficient designs.

Case Connection: EMITTER

Emitter connection allows for efficient thermal management and stability in circuit operations, crucial for amplifier performance.

Nominal Transition Frequency (fT): 42000 MHz

A high transition frequency of 42 GHz ensures this transistor can handle fast-switching applications, enhancing overall circuit responsiveness.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) START499ETR attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

START499ETR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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