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START405

STMicroelectronics

START405 by STMicroelectronics

START405 by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.045 W and a nominal transition frequency of 42 GHz. It operates in the C band with a compact surface mount package. Ideal for high-frequency circuits, it supports up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,831 parts In-Stock

1+ parts

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2,831

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Digiode

USA . 1,731 parts In-Stock

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1,731

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Anansix

USA . 928 parts In-Stock

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928

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,281 parts In-Stock

1+ parts

$1.595

100+ parts

-

1k+ parts

$1.436

10k+ parts

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2,281

$1.595

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$1.436

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MKK Technologies

India . 2,206 parts In-Stock

1+ parts

$3.000

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2,206

$3.000

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DigiPath Technology Company

USA . 2,206 parts In-Stock

1+ parts

$3.000

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2,206

$3.000

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Corphita

USA . 4,651 parts In-Stock

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4,651

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Parana Technologies

USA . 2,180 parts In-Stock

1+ parts

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100+ parts

$1.907

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2,180

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$1.907

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Overview

Unlock the power of innovation with the START405 by STMicroelectronics—a top-tier NPN RF Small Signal Transistor engineered for excellence. Renowned for its reliability and performance, STMicroelectronics ensures every device meets high standards, making it perfect for amplifying signals in diverse applications. Experience enhanced efficiency and compact design that seamlessly integrates into your projects, empowering you to achieve more without compromise. Elevate your designs with unmatched quality today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body ensures durability and protection against environmental factors, making it well-suited for various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it is ideal for high-speed switching and amplification, making it a versatile choice for RF applications.

Configuration: SINGLE

The single configuration allows for simplicity in circuit design and reduces the footprint on PCBs, making it efficient for compact applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor can effectively boost signals, making it suitable for RF signal processing.

Surface Mount: YES

Surface mount technology facilitates automated assembly and improves circuit density, crucial for modern electronics.

Package Shape: RECTANGULAR

The rectangular shape optimizes layout and design flexibility on circuit boards, enhancing the overall performance of the device.

Terminal Form: GULL WING

Gull wing terminals provide robust mechanical connections and simplify soldering during assembly, ensuring reliable performance.

Highest Frequency Band: C BAND

Operating in the C band makes this transistor suitable for a range of communication applications, including satellite and terrestrial microwave communications.

No. of Terminals: 4

Four terminals provide necessary connections for enhanced functionality while maintaining a compact size, allowing for simplified circuit designs.

Maximum Power Dissipation (Abs): 0.045 W

A low power dissipation rating ensures efficiency and reduces the risk of thermal issues, making it reliable for continuous operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports high-density applications, making it perfect for space-constrained designs.

Minimum DC Current Gain (hFE): 50

A minimum gain of 50 enables efficient signal amplification, making it suitable for use in RF amplifiers where gain is critical.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature provides reliability and robustness in demanding environments.

Maximum Collector-Emitter Voltage: 4.5 V

A modest collector-emitter voltage rating allows for safe operation in lower voltage applications, enhancing stability.

Transistor Element Material: SILICON

Silicon material allows for effective heat dissipation and high performance, making it a standard choice for electronic components.

Maximum Collector Current (IC): 0.01 A

A maximum collector current of 10 mA makes this transistor suitable for low-power applications, improving overall efficiency.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures excellent solderability and protects against oxidation, enhancing long-term reliability.

Terminal Position: DUAL

Dual terminal positioning allows greater flexibility in layout and connectivity, accommodating various circuit designs.

Case Connection: EMITTER

Emitter connection simplifies circuit configuration and enhances thermal management, improving performance.

Nominal Transition Frequency (fT): 42000 MHz

A high transition frequency of 42 GHz enables this transistor to operate efficiently at high frequencies, making it ideal for advanced RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) START405 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

LOW NOISE

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

START405 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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