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START620TR

STMicroelectronics

START620TR by STMicroelectronics

START620TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.135 W, operates up to 150 °C, and supports frequencies in the C band with a transition frequency of 45 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,561 parts In-Stock

1+ parts

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3,561

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Anansix

USA . 2,504 parts In-Stock

1+ parts

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2,504

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Vyrian

USA . 647 parts In-Stock

1+ parts

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647

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,212 parts In-Stock

1+ parts

$1.716

100+ parts

-

1k+ parts

$1.544

10k+ parts

-

2,212

$1.716

-

$1.544

-

MKK Technologies

India . 107 parts In-Stock

1+ parts

$3.226

100+ parts

-

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107

$3.226

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DigiPath Technology Company

USA . 107 parts In-Stock

1+ parts

$3.226

100+ parts

-

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107

$3.226

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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Parana Technologies

USA . 2,011 parts In-Stock

1+ parts

-

100+ parts

$2.052

1k+ parts

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2,011

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$2.052

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Corphita

USA . 1,284 parts In-Stock

1+ parts

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1,284

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Overview

Unlock unparalleled performance with the START620TR from STMicroelectronics, a trusted leader in semiconductor innovation. This small signal BJT excels in amplifier applications, delivering superior quality and reliability for your RF projects. Its compact design allows for seamless integration into various devices, ensuring robust functionality even in demanding environments. Elevate your designs with this NPN transistor and experience enhanced efficiency today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection against environmental factors, making the transistor reliable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient current flow, making it suitable for amplification and switching applications.

Configuration: SINGLE

A single configuration simplifies circuit design and implementation, making it easier for engineers to integrate into their systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is ideal for audio and RF amplifiers, ensuring high-quality signal processing.

Surface Mount: YES

The surface mount design allows for compact circuit layouts and automated assembly processes, decreasing overall production costs.

Package Shape: RECTANGULAR

The rectangular shape maximizes space utilization on printed circuit boards (PCBs), aiding in effective design and layout.

Terminal Form: GULL WING

Gull wing terminals enhance mechanical stability and solderability, ensuring a strong connection in surface-mounted applications.

Highest Frequency Band: C BAND

Working within the C band frequency range makes this transistor suitable for communication applications such as satellite and wireless transmissions.

No. of Terminals: 4

Having four terminals allows for versatility in circuit design, enabling various configurations while maintaining compactness.

Maximum Power Dissipation (Abs): 0.135 W

With a power dissipation of 135 mW, this transistor can effectively handle moderate power loads while minimizing thermal issues.

Package Style (Meter): SMALL OUTLINE

The small outline package saves board space and allows for high-density assembly, facilitating modern compact electronic designs.

Maximum Operating Temperature: 150 °C

A high operating temperature rating ensures reliability under demanding thermal conditions, suitable for various environments.

Maximum Collector-Emitter Voltage: 3.3 V

The low voltage specification makes it compatible with low-voltage circuits, providing design flexibility.

Transistor Element Material: SILICON GERMANIUM

Silicon-germanium material enhances performance at high frequencies, making it ideal for RF and microwave applications.

Maximum Collector Current (IC): 0.04 A

The maximum collector current provides adequate drive capabilities for small signal applications without excessive heat generation.

Terminal Finish: MATTE TIN

Matte tin provides excellent solderability and corrosion resistance, ensuring reliable connections in high-performance circuits.

Terminal Position: DUAL

Dual terminal positioning enhances the stability of the connection and allows for better layout options on the PCB.

Case Connection: EMITTER

Emitter case connection improves thermal dissipation and simplifies integration in common emitter amplifier configurations.

Nominal Transition Frequency (fT): 45000 MHz

A high transition frequency of 45 GHz ensures this transistor can operate effectively in high-speed applications, enhancing signal integrity.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) START620TR attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

LOW NOISE

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

3.3 V

Configuration:

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON GERMANIUM

Nominal Transition Frequency (fT):

Trade Compliance

START620TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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