Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The NXP Semiconductors BFU550XRVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications. It has a max operating temperature of 150°C and can handle a collector-emitter voltage of 12V. With a transition frequency of 11GHz, it is ideal for L Band frequencies in small outline packages.
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Provides durability and protection for the transistor, making it suitable for various applications.
NPN transistors are commonly used in amplifier circuits, ensuring compatibility with a wide range of circuits.
Simplified setup and ease of use for amplifier applications.
Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.
Allows for easy and efficient mounting on PCBs, saving space and enabling high-density circuit design.
Compact design that facilitates easy placement and routing on the PCB.
High operating temperature tolerance ensures reliable performance under various environmental conditions.
Suitable for low voltage applications, providing versatility in circuit design.
High transition frequency allows for amplification of high-frequency signals, making it ideal for RF applications.
RF Small Signal Bipolar Junction Transistors (BJT) BFU550XRVL attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFU550XRVL Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00
PCN Packaging - All Dev Label Update 15/Dec/2020
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
SS14
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FT232RL-TUBE
FTDI
FTDI's FT232RL-TUBE is a bus controller with 28 terminals, operating at 3.3-5.25V. It supports USB, VBUS, and UART interfaces with a data transfer rate of 60MBps. Ideal for industrial applications requiring RS232/RS422/RS485 compatibility in compact designs due to its small outline package style.
LM358M
Texas Instruments
LM358M by Texas Instruments is an Operational Amplifier with 2 functions, featuring a max input offset voltage of 9000 uV and a nominal voltage of 5 V. It is commonly used in applications requiring high common mode rejection ratio and low bias current, such as sensor interfaces and signal conditioning circuits.
MBR0520L-T1
Won-top Electronics
MBR0520L-T1 by Won-top Electronics is a Schottky rectifier diode with 20V peak reverse voltage and 0.5A output current. It is a single-config, surface-mount diode in a small outline package, suitable for applications requiring high-speed switching and low forward voltage drop. Operating temperature range from -65°C to 125°C makes it ideal for various electronic circuits.
1N4148WS
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS123,215
NXP Semiconductors
NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.
MC7805CTG
Onsemi
MC7805CTG by Onsemi is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation. The package style is flange mount with through-hole terminals, ensuring easy installation and reliability in diverse electronic designs.
CRCW080510K0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510K0FKEA is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 reference standard compliance and -55 to 155 °C operating temperature range.
IRLML6401TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;
1N4148
ROHM
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Maximum Reverse Recovery Time: .006 us;
LM555CM
LM555CM by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V and max operating temperature of 70°C. It comes in a small outline package, suitable for applications requiring pulse generation or rectangular waveform outputs. With surface mount capability and low supply current of 15mA, it is ideal for commercial-grade electronic circuits.
SMBJ18CA
International Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
2N2222A
Telcom Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
M39029/56351
Esterline Technologies
CONNECTOR ACCESSORY; IEC Conformity: NO; Contact Gender: FEMALE; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT; Tool Settings: M22520/2-10;
LAN8720A-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
Jiangsu Jiejie Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRA340T3G
MBRA340T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 3A max output current. Ideal for power applications, it operates b/w -55 to 150°C, features matte tin terminal finish, and comes in a small outline package.
Diodes Incorporated
KYOCERA AVX
BFQ256A-TAPE-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .3 A; No. of Terminals: 4;
BFR93A,235
NXP Semiconductors' BFR93A,235 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 6000 MHz and hFE of 40. Ideal for amplifier applications, it has a max power dissipation of 0.35W and can handle up to 12V collector-emitter voltage.
2SC4399-5
RF Small Signal Bipolar Transistors;
MSC81402
STMicroelectronics
STMicroelectronics' MSC81402 is an NPN BJT transistor with a max power dissipation of 6W. Ideal for L Band applications, it has a min hFE of 30 and max IC of 0.23A. The package style is flange mount with a ceramic-metal sealed co-fired body material.
HFA3096BZ96
Integrated Device Technology
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; JESD-30 Code: R-PDSO-G16;
BFS20,215
The NXP Semiconductors BFS20,215 is a single NPN RF small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 20V and a min DC current gain of 40. It operates in the very high frequency band up to 450MHz and is suitable for applications requiring high-frequency amplification or switching.
START620TR
START620TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.135 W, operates up to 150 °C, and supports frequencies in the C band with a transition frequency of 45 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.
MPS5179ZL1
MPS5179ZL1 by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 12V and fT of 900MHz. Ideal for amplifier applications, it has a max collector current of 0.05A and a package style of cylindrical PLASTIC/EPOXY.
2N2369A
Thomson-csf Semiconductors
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .2 A; Terminal Form: WIRE; Package Style (Meter): CYLINDRICAL;
934047470115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Terminal Position: DUAL;
LM3046MX
LM3046MX by Texas Instruments is an NPN BJT with 5 elements, suitable for amplifier applications in the VHF band. It has a max fT of 550 MHz, hFE of 40, and can handle up to 0.05 A collector current. The package is a small outline with Gull Wing terminals and can dissipate 0.75 W at 85°C.
BFU550AVL
The NXP Semiconductors BFU550AVL is a RF Small Signal BJT transistor with NPN polarity. It is a single configuration amplifier, suitable for L Band applications. With a max operating temperature of 150°C and a nominal transition frequency of 11 GHz, it offers high performance in a small outline package.
2SC5231A-9-TL-E
RF Small Signal Bipolar Transistors; Terminal Finish: Tin/Bismuth (Sn/Bi); JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1;
BFR520,215
NXP Semiconductors' BFR520,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 9000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle a max collector current of 0.07A at an operating temp of 175°C.
BFU520XR
The NXP Semiconductors BFU520XR is an NPN RF BJT transistor with a max fT of 10500 MHz. It has a collector-emitter voltage of 16V and operates in the L band frequency range. Ideal for amplifier applications, it comes in a small outline package with gull wing terminals for surface mount assembly.
934067703235
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;
BLW32
New Jersey Semiconductor Products
NPN; Nominal Transition Frequency (fT): 3500 MHz; Maximum Collector Current (IC): .65 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 30 V; No. of Elements: 1;
BFR96
Space Power Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .075 A; Qualification: Not Qualified;
BFR740L3RHE6327XTSA1
Infineon Technologies
BFR740L3RHE6327XTSA1 by Infineon Technologies is an NPN RF BJT for X Band applications. It has a max fT of 42 GHz, 0.03A IC, and 4V VCE. This single configuration transistor in chip carrier package is ideal for amplifier circuits requiring high frequency operation.
MPS3563
MPS3563 by Onsemi is an NPN RF BJT transistor with a max fT of 1500 MHz. It has a max IC of 0.05A and Ptot of 0.625W, making it suitable for ultra-high frequency amplifier applications. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
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BFU590GX
The NXP Semiconductors BFU590GX is a RF Small Signal BJT transistor with NPN polarity. It has a max operating temperature of 150°C and can handle a max collector-emitter voltage of 12V. This transistor is commonly used in amplifiers for L Band applications.
BFU530AR
The NXP Semiconductors BFU530AR is a RF BJT transistor with NPN polarity, suitable for amplifier applications in the L Band. It has a max collector-emitter voltage of 12V, collector current of 0.04A, and transition frequency of 11GHz. This surface-mount device comes in a small outline package with Gull Wing terminals.
BFU520AR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;
BFU550AR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .08 A;
BFU520WX
The NXP Semiconductors BFU520WX is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 10GHz. It is designed for amplifier applications in the L band, featuring a small outline package with gull wing terminals for surface mount assembly. Operating from -40°C, it offers a peak reflow temperature of 260°C and complies with AEC-Q101 and IEC-60134 standards.
BFU520YX
The NXP Semiconductors BFU520YX is an RF NPN BJT transistor with a max fT of 10 GHz. It has a max VCE of 12V and Ptot of 0.45W, suitable for L Band applications like amplifiers. The package is a small outline with Gull Wing terminals, operating b/w -40 to 150°C.
BFU550XAR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;
BFU550XRR
BFU550WF
The NXP Semiconductors BFU550WF is an RF BJT transistor with a max fT of 11GHz. It operates in L Band, has a Vce of 12V, and IC of 0.05A. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.
BFU590QX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
BFU550VL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
BFU550XVL
The NXP Semiconductors BFU550XVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies up to 11GHz. It features a max collector-emitter voltage of 12V, collector current of 0.05A, and a transition frequency of 11GHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
BFU550R
BFU550WX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
BFU520VL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
BFU520XR,235
BFU520XRR
The NXP Semiconductors BFU520XRR is a RF BJT transistor with NPN polarity, ideal for amplifier applications in the L band. It has a max operating temperature of 150°C, fT of 10500 MHz, and can handle a collector-emitter voltage of 16V. This small outline transistor features gull wing terminals and is surface mountable.
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