Loading...

BFU550XRVL

NXP Semiconductors

BFU550XRVL by NXP Semiconductors

The NXP Semiconductors BFU550XRVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications. It has a max operating temperature of 150°C and can handle a collector-emitter voltage of 12V. With a transition frequency of 11GHz, it is ideal for L Band frequencies in small outline packages.

Median Price

$0.279

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.101

100+ parts

-

1k+ parts

-

10k+ parts

-

550

$0.101

-

-

-

Digiode

USA . 811 parts In-Stock

1+ parts

$0.456

100+ parts

-

1k+ parts

-

10k+ parts

-

811

$0.456

-

-

-

Vyrian

USA . 9,765 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,765

-

-

-

-

VNN

France . 1,141 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,141

-

-

-

-

Anansix

USA . 429 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

429

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,821 parts In-Stock

1+ parts

$0.101

100+ parts

-

1k+ parts

-

10k+ parts

$0.099

5,821

$0.101

-

-

$0.099

Argo Parts USA

USA . 1,481 parts In-Stock

1+ parts

$0.101

100+ parts

-

1k+ parts

-

10k+ parts

$0.098

1,481

$0.101

-

-

$0.098

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.101

100+ parts

-

1k+ parts

$0.096

10k+ parts

$0.094

1,000

$0.101

-

$0.096

$0.094

Corphita

USA . 715 parts In-Stock

1+ parts

$0.432

100+ parts

-

1k+ parts

-

10k+ parts

-

715

$0.432

-

-

-

Ampacity Inc.

Singapore . 9,761 parts In-Stock

1+ parts

$0.890

100+ parts

-

1k+ parts

-

10k+ parts

-

9,761

$0.890

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

UNI Independent Distributors

Spain . 952 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

952

-

-

-

-

Overview

Elevate your RF signal amplification with the BFU550XRVL by NXP Semiconductors. This small yet powerful NPN transistor offers top-notch quality and reliability, making it ideal for a wide range of amplifier applications in the L band. With its high frequency band capabilities and low power dissipation, this transistor is designed to deliver exceptional performance. Trust NXP Semiconductors to provide you with the cutting-edge technology you need to take your projects to the next level. Experience the difference with the BFU550XRVL - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, ensuring compatibility with a wide range of circuits.

Configuration: SINGLE

Simplified setup and ease of use for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Allows for easy and efficient mounting on PCBs, saving space and enabling high-density circuit design.

Package Shape: RECTANGULAR

Compact design that facilitates easy placement and routing on the PCB.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance ensures reliable performance under various environmental conditions.

Maximum Collector-Emitter Voltage: 12 V

Suitable for low voltage applications, providing versatility in circuit design.

Nominal Transition Frequency (fT): 11000 MHz

High transition frequency allows for amplification of high-frequency signals, making it ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFU550XRVL attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.41 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFU550XRVL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19