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2SC4915-O,LF

Toshiba

2SC4915-O,LF by Toshiba

2SC4915-O,LF by Toshiba is an NPN RF BJT transistor with a single configuration for amplifier applications. It offers a min power gain of 17 dB and operates in the very high frequency band up to 550 MHz. With a max collector-emitter voltage of 30V and dual terminal position, it is suitable for small outline surface mount designs.

Median Price

$0.094

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Overview

Discover the exceptional performance and reliability of the 2SC4915-O,LF by Toshiba. As a leading manufacturer in the industry, Toshiba's RF Small Signal Bipolar Junction Transistors (BJTs) are trusted for their quality and innovation. Ideal for amplifier applications in the very high frequency band, this NPN transistor offers a power gain of 17 dB and a transition frequency of 550 MHz. With a compact design and maximum collector-emitter voltage of 30V, this transistor provides unmatched value and efficiency for your electronic projects. Choose Toshiba for top-notch performance and superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile and useful for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easier to use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on circuit boards, enhancing convenience in assembly.

Minimum Power Gain (Gp): 17 dB

The high minimum power gain ensures efficient amplification of signals in a circuit.

Package Shape: RECTANGULAR

Rectangular shape provides a compact footprint, saving space in circuit layouts.

Terminal Form: GULL WING

Gull wing terminals offer secure connections and easy soldering, improving reliability in circuit connections.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Supports operation in very high frequency bands, making it suitable for applications requiring high-speed data transmission.

No. of Terminals: 3

The three terminals offer versatility in circuit connections and functionalities.

Maximum Power Dissipation (Abs): 0.1 W

With a maximum power dissipation of 0.1W, the transistor can handle moderate power levels effectively.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-efficient and suitable for compact circuit designs.

Maximum Power Dissipation Ambient: 0.1 W

The transistor can safely dissipate up to 0.1W of power in ambient conditions, ensuring reliable operation.

Minimum DC Current Gain (hFE): 70

The high minimum DC current gain of 70 ensures stable amplification of input signals in the circuit.

Maximum Operating Temperature: 125 °C

The transistor can operate at temperatures up to 125°C, suitable for a wide range of operating environments.

Maximum Collector-Base Capacitance: 0.55 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency performance.

Maximum Collector-Emitter Voltage: 30 V

The high collector-emitter voltage rating of 30V allows for safe operation in various circuit configurations.

Transistor Element Material: SILICON

Silicon material provides reliable and stable transistor performance for long-term use.

Maximum Collector Current (IC): 0.02 A

The transistor can handle collector currents up to 0.02A, suitable for low to moderate current applications.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and mounting options.

Nominal Transition Frequency (fT): 550 MHz

The high nominal transition frequency of 550MHz ensures excellent high-frequency performance in amplifier circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC4915-O,LF attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.55 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

70

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

17 dB

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC4915-O,LF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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