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2SC4915-O,LF(B

Toshiba

2SC4915-O,LF(B by Toshiba

2SC4915-O,LF(B by Toshiba is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 17 dB and operates in the very high frequency band up to 550 MHz. With a max collector-emitter voltage of 30V and dual terminal position, it is suitable for small outline surface mount designs.

Median Price

$0.205

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Verical

USA . 8,626 parts In-Stock

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$0.205

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$0.193

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Vyrian

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Nova Conductors

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Ampacity Inc.

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CoreStaff

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$0.405

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Corohmni

South Africa . 222 parts In-Stock

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$1.249

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Argo Parts USA

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Overview

Enhance your amplifier projects with the 2SC4915-O,LF(B by Toshiba. Known for its high-quality RF Small Signal Bipolar Junction Transistors, Toshiba delivers reliable performance and durability in every product. Ideal for applications in the very high-frequency band, this NPN transistor offers a minimum power gain of 17 dB and a nominal transition frequency of 550 MHz. With a maximum collector-emitter voltage of 30V and a collector current of 0.02A, this transistor provides exceptional value and benefits to customers seeking top-notch amplification solutions. Elevate your projects with Toshiba's 2SC4915-O,LF(B today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Epoxy packaging provides good protection against environmental factors, making the transistor durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this transistor suitable for amplifier circuits.

Minimum Power Gain (Gp): 17 dB

With a minimum power gain of 17 dB, this transistor provides good amplification capabilities for signal processing.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and simplifying manufacturing processes.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this transistor can withstand high-temperature environments, ensuring reliable performance.

Nominal Transition Frequency (fT): 550 MHz

The high nominal transition frequency of 550 MHz allows for fast signal switching and high-frequency operation, suitable for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC4915-O,LF(B attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.55 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

70

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

17 dB

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC4915-O,LF(B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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