Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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HFA3096BZ by Renesas Electronics is a RF BJT with NPN and PNP channels, 5 elements, and ultra-high frequency band. It is used for amplifier applications in small outline packages with 16 terminals. With a max fT of 8000 MHz, it offers high performance in compact designs.
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Plastic/epoxy packaging provides durability and protection for the transistor, making it suitable for various applications.
Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.
Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.
Operates in the ultra-high frequency band, making it suitable for high-frequency applications that require fast signal processing.
With a maximum collector-emitter voltage of 8V, this transistor can handle moderate voltage levels in various circuit designs.
High nominal transition frequency of 8000 MHz indicates fast switching speeds and high-frequency performance, ideal for high-speed applications.
RF Small Signal Bipolar Junction Transistors (BJT) HFA3096BZ attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics
Additional Features:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
HFA3096BZ Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
M24308/2-1F
Positronic Industries
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Body or Shell Style: RECEPTACLE;
1N4148
Bkc Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138LT1G
Onsemi
BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.
BAV99W-7-F
Diodes Incorporated
Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.
2N7002
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;
EU2B-YS2J03C
Idec
ROTARY SWITCH;
BSS123-7-F
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
1N4148W-7-F
1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.
LL4148
Silicon Standard
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
M39029/58360
Souriau
CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;
B340A-13-F
B340A-13-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 3A max output current, and 0.5V max forward voltage. It is used for efficiency applications in electronics due to its small outline package and high operating temperature range of -55°C to 150°C.
Itt Components
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .005 us; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Non Repetitive Peak Forward Current: 1 A;
LM358D-T
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
USBLC6-2SC6
STMicroelectronics
USBLC6-2SC6 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 6V. It has a max clamping voltage of 17V and operates in temperatures ranging from -40 to 125°C. This device, with dual terminals and matte tin finish, is ideal for protecting sensitive electronics from voltage spikes in various applications.
2N2222A
Micropac Industries
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
PIC18F4550-I/PT
Microchip Technology
PIC18F4550-I/PT by Microchip: 8-bit microcontroller with 44 terminals, 48 MHz clock frequency, and USB connectivity. Ideal for industrial applications requiring low power mode and 10-bit ADC channels.
SS14
Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
Jinan Jingheng Electronics
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MPSH11ZL1
MPSH11ZL1 by Onsemi is an NPN RF BJT with 3 terminals, operating up to 150 °C. It has a max collector-emitter voltage of 25V and a transition frequency of 650MHz. Ideal for applications requiring ultra-high frequency band performance in cylindrical package style.
BFQ253
NXP Semiconductors
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .3 A; Package Style (Meter): CYLINDRICAL;
MPSH17ZL1
MPSH17ZL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is used in amplifier applications due to its very high frequency band capability. The package style is cylindrical with a plastic/epoxy body material and through-hole terminals.
MMBTH10Q-7-F
RF Small Signal Bipolar Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
KSC1393R
KSC1393R by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, DC current gain of 40, and operates in the very high frequency band up to 700 MHz. This transistor has a max collector-emitter voltage of 30V and can handle a max power dissipation of 0.25W at an ambient temperature of 150 °C.
BFP196E6327HTSA1
Infineon Technologies
BFP196E6327HTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, operating up to 150°C. It has a max fT of 7500 MHz and collector-emitter voltage of 12V, making it ideal for L Band amplifier applications. The package is surface mountable with Gull Wing terminals in a small outline rectangular shape.
BFR93A
Vishay Telefunken
RF Small Signal Bipolar Transistors; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;
MMBT918LT1
MMBT918LT1 by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It has a max IC of 0.05 A and operates up to 150 °C, making it suitable for ultra-high frequency amplifier applications in small outline packages.
55GN01FA
55GN01FA by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications in the UHF band. It has a max power dissipation of 0.25W, hFE of 100, and fT of 5500MHz. The package is small outline plastic/epoxy with dual terminal position and can operate up to 150 °C.
2SC5501A-4-TR-E
RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH; Peak Reflow Temperature (C): 260;
MMBT5179
Fairchild Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
2N3866
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
BFP620H7764XTSA1
BFP620H7764XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for C band applications. It has a max fT of 65 GHz, collector-emitter voltage of 2.3V, and collector current of 0.08A. Ideal for high-frequency amplifier circuits in automotive electronics due to AEC-Q101 compliance.
BFR193WH6327XTSA1
BFR193WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 12V VCE, 8000MHz fT, and 0.08A IC. Ideal for L Band applications like amplifiers due to its high transition frequency and low collector-base capacitance. Features Gull Wing terminals in a small outline package for surface mount assembly.
A5T3572
Texas Instruments
A5T3572 by Texas Instruments is an NPN BJT transistor with 3 terminals, 0.05 A max collector current, and 1000 MHz transition frequency. Ideal for amplifier applications in the ultra high-frequency band, it has a max power dissipation of 0.5 W and operates up to 150°C.
934067703215
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;
SD1143-1
NPN; Surface Mount: NO; Transistor Element Material: SILICON;
MMBTH10
MMBTH10 by Onsemi is an NPN RF BJT transistor with a max fT of 650 MHz. It's a single configuration amplifier in a small outline package, suitable for ultra-high frequency applications. With a max operating temp of 150°C and Pdiss of 0.225W, it's ideal for high-frequency circuit designs.
MMBTH17LT1
MMBTH17LT1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is designed for ultra-high frequency band applications like amplifiers, featuring a small outline package with gull wing terminals. The transistor's silicon element material ensures high performance in RF signal amplification.
2N3643
Thomson-csf Semiconductors
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .5 A; Qualification: Not Qualified; Transistor Element Material: SILICON;
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HFA3046BZ
Integrated Device Technology
NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Qualification: Not Qualified;
Renesas Electronics
Renesas Electronics' HFA3046BZ is an NPN RF BJT with 5 elements and 14 terminals. Operating in the ultra-high frequency band at 8V, it's ideal for amplifier applications. This complex transistor has a max transition frequency of 8000MHz and is surface mountable with a small outline package style.
Intersil
NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Collector-Emitter Voltage: 8 V;
HFA3127BZ
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Terminal Finish: MATTE TIN; Maximum Collector-Emitter Voltage: 8 V;
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; JEDEC-95 Code: MS-012AC;
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Minimum DC Current Gain (hFE): 40;
HFA3127RZ
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Moisture Sensitivity Level (MSL): 2; Terminal Form: NO LEAD;
HFA3127RZ96
HFA3127RZ96 by Renesas Electronics is an NPN RF transistor with a max collector-emitter voltage of 8V. It has a nominal transition frequency of 8000MHz, making it suitable for amplifier applications in the ultra-high frequency band. This surface-mount transistor comes in a square chip carrier package with 16 terminals.
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Package Body Material: PLASTIC/EPOXY;
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; JESD-609 Code: e3;
HFA3127BZ96
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Package Body Material: PLASTIC/EPOXY; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Transistor Application: AMPLIFIER;
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Time At Peak Reflow Temperature (s): 30;
HFA3096BZ96
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; JESD-30 Code: R-PDSO-G16;
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Transistor Application: AMPLIFIER; Maximum Time At Peak Reflow Temperature (s): 30;
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Collector-Emitter Voltage: 8 V;
HFA3096BZ
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Package Style (Meter): SMALL OUTLINE;
HFA3096B96
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Transistor Application: AMPLIFIER;
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