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BFG425W,115

NXP Semiconductors

BFG425W,115 by NXP Semiconductors

BFG425W,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is designed for switching applications in the L Band frequency range up to 25 GHz. This surface mount transistor has a max power dissipation of 0.135 W and can handle a max collector current of 0.03 A.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 750 parts In-Stock

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$0.073

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750

$0.073

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Freelance Electronics

USA . 518 parts In-Stock

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$0.380

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518

$0.380

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Component Electronics Inc.

Canada . 5 parts In-Stock

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$1.190

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$0.890

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$0.780

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5

$1.190

$0.890

$0.780

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VNN

France . 4,277 parts In-Stock

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Digiode

USA . 2,975 parts In-Stock

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Vyrian

USA . 2,502 parts In-Stock

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Anansix

USA . 1,952 parts In-Stock

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LWI Electronics Inc

India . 1,630 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,394 parts In-Stock

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Elcom Components

USA . 1,000 parts In-Stock

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J2 Sourcing AB

Sweden . 61 parts In-Stock

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North Shore Components

USA . 50 parts In-Stock

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50

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Distributors (Availability)

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Continental Prestige Electronics

USA . 4,851 parts In-Stock

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$0.073

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$0.072

4,851

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Argo Parts USA

USA . 1,420 parts In-Stock

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$0.073

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$0.071

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Netroflash

USA . 50 parts In-Stock

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$0.073

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$0.069

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$0.068

50

$0.073

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$0.069

$0.068

Corohmni

South Africa . 260 parts In-Stock

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$0.073

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Aztec Data Supply Inc.

USA . 1,294 parts In-Stock

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$0.710

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$0.710

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Ampacity Inc.

Singapore . 1,429 parts In-Stock

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$1.050

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AZTECH Wire

Italy . 531 parts In-Stock

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$10.526

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$10.526

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Semicontronic

India . 801 parts In-Stock

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$49.050

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$47.824

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$47.578

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801

$49.050

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$47.578

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One Stop Electronics

USA . 1,635 parts In-Stock

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$56.050

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Kepictronics

USA . 27,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Infinite Electronics LLP (Excess)

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UNI Independent Distributors

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A-Z Elektronik GmbH

Germany . 5,835 parts In-Stock

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Authorized Procurement Solutions

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Perfect Parts

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Assy Fe

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Corphita

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Overview

Experience superior quality and performance with the BFG425W,115 by NXP Semiconductors. As a leading manufacturer in RF Small Signal Bipolar Junction Transistors (BJT), NXP offers unbeatable value and advantages. This versatile product is perfect for switching applications, providing reliable and efficient performance. With its high frequency range, robust construction, and compact design, the BFG425W,115 is the ideal choice for L Band applications. Trust NXP Semiconductors to deliver the best-in-class solutions that exceed your expectations. Upgrade your electronics with the BFG425W,115 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching purposes, offering high efficiency and reliability.

Configuration: SINGLE

Simplified design with a single transistor makes it easier to implement in circuits and reduces complexity.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring fast and efficient performance.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and simplifying assembly.

Maximum Power Dissipation (Abs): 0.135 W

Can handle a moderate power dissipation level, suitable for various applications without overheating.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments, increasing its versatility and reliability.

Nominal Transition Frequency (fT): 25000 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFG425W,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.135 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFG425W,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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