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MMPQ2369R1

Onsemi

MMPQ2369R1 by Onsemi

MMPQ2369R1 by Onsemi is a NPN BJT with 4 elements, ideal for amplifier applications. It features a max fT of 550 MHz, VCE of 15V, and IC of 0.5A. The transistor comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,693 parts In-Stock

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Vyrian

USA . 1,552 parts In-Stock

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Problanco Electronics

Mexico . 8,274 parts In-Stock

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SupplyDigital Components

Austria . 2,737 parts In-Stock

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Kulean Microsystems

USA . 2,378 parts In-Stock

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Corphita

USA . 2,166 parts In-Stock

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TANS Electronics

Latvia . 1,662 parts In-Stock

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UHIMA Technologies

Türkiye . 730 parts In-Stock

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Corohmni

South Africa . 459 parts In-Stock

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Overview

Unleash the power of innovation with the MMPQ2369R1 by Onsemi, a top-quality RF Small Signal Bipolar Junction Transistor (BJT) designed for amplification applications. With its separate 4-element configuration and NPN polarity, this transistor offers unmatched performance and reliability. From its small outline package to its high transition frequency of 550 MHz, this product is perfect for cutting-edge electronic designs. Elevate your projects with the Onsemi advantage and experience superior quality and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic package material provides good insulation and protection for the transistor, ensuring better reliability and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile for various circuit designs.

Configuration: SEPARATE, 4 ELEMENTS

Having separate, 4 elements configuration allows for more flexibility in circuit design, enabling complex signal processing tasks.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides optimal performance in amplifying signals accurately and efficiently.

Surface Mount: YES

Surface mount capability makes it easier to integrate the transistor onto PCBs, saving space and reducing production costs.

Package Shape: RECTANGULAR

Rectangular package shape ensures a standard form factor for easy handling and installation in various electronic devices.

Terminal Form: GULL WING

Gull wing terminal form facilitates soldering onto PCBs, providing a secure and reliable connection for stable operation.

Maximum Collector-Base Capacitance: 4 pF

Low collector-base capacitance helps in high-frequency applications by reducing signal distortion and improving overall performance.

Maximum Collector-Emitter Voltage: 15 V

With a high collector-emitter voltage rating, this transistor can handle higher voltage levels, ensuring safety and reliability in various circuits.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency in electronic components, ensuring stable and consistent performance.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels, making it suitable for various amplifier circuits.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides good solderability and corrosion resistance, ensuring a long-lasting and reliable connection.

Terminal Position: DUAL

Dual terminal position allows for easy integration and connection in circuits, providing flexibility in installation and layout design.

Nominal Transition Frequency (fT): 550 MHz

High transition frequency enables fast signal processing and high-frequency operation, making this transistor suitable for high-speed applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMPQ2369R1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

No. of Elements:

4

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMPQ2369R1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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