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MPS6507RLRA

Onsemi

MPS6507RLRA by Onsemi

MPS6507RLRA by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 20V and a max operating temperature of 150 °C. It is designed for amplifier applications, featuring a nominal transition frequency of 800MHz. The transistor has a package style of cylindrical with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 939 parts In-Stock

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Digiode

USA . 920 parts In-Stock

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Kulean Microsystems

USA . 5,456 parts In-Stock

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Problanco Electronics

Mexico . 3,527 parts In-Stock

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TANS Electronics

Latvia . 2,980 parts In-Stock

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Corphita

USA . 2,029 parts In-Stock

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SupplyDigital Components

Austria . 1,995 parts In-Stock

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1,995

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UHIMA Technologies

Türkiye . 585 parts In-Stock

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Corohmni

South Africa . 492 parts In-Stock

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Overview

Elevate your amplifier designs with the MPS6507RLRA by Onsemi, a high-quality RF Small Signal BJT transistor that offers unmatched performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is perfect for applications requiring precision and efficiency. With its durable plastic/epoxy package and 800 MHz transition frequency, this transistor delivers exceptional value and benefits to customers looking for superior amplification capabilities. Upgrade your projects with the MPS6507RLRA and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material which ensures the longevity and portability of the product.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and current gain characteristics.

Configuration: SINGLE

Simplified design with a single transistor allows for easy integration into various electronic circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in audio or signal amplification circuits.

Package Shape: ROUND

Compact round shape allows for easy mounting and integration into circuit boards.

No. of Terminals: 3

Simple three-terminal design facilitates easy connections in electronic circuits.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, suitable for a wide range of operating environments.

Maximum Collector-Base Capacitance: 2.5 pF

Low collector-base capacitance minimizes signal distortion and interference in high-frequency applications.

Maximum Collector-Emitter Voltage: 20 V

Sufficient collector-emitter voltage rating for use in low voltage applications, providing a safety margin for voltage fluctuations.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and efficiency, enhancing the overall performance of the transistor.

Maximum Collector Current (IC): 0.05 A

Able to handle moderate collector currents, suitable for low-power applications where efficiency is crucial.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and ensures reliable electrical connections in the circuit.

Nominal Transition Frequency (fT): 800 MHz

High transition frequency allows for efficient signal amplification and fast switching speeds in high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS6507RLRA attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6507RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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