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BFG67/X,215

NXP Semiconductors

BFG67/X,215 by NXP Semiconductors

NXP Semiconductors' BFG67/X,215 is a NPN RF BJT transistor with 4 terminals. It operates in L Band with fT of 8000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 10 V collector-emitter voltage.

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VNN

France . 21,830 parts In-Stock

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Cogito LLC

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Nova Conductors

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AZTECH Wire

Italy . 835 parts In-Stock

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One Stop Electronics

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Component Stockers USA

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Argo Parts USA

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Overview

Elevate your RF amplifier designs with the BFG67/X,215 by NXP Semiconductors. This small signal bipolar junction transistor boasts top-notch quality and reliability, perfect for L band applications. With a single configuration and NPN polarity, this transistor offers customers unmatched performance and efficiency. Experience the benefits of superior power dissipation, high transition frequency, and easy surface mounting in a compact package. Trust NXP Semiconductors to deliver cutting-edge technology that takes your amplifiers to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and ensures the transistor is resistant to environmental factors, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and offer high efficiency in signal processing.

Configuration: SINGLE

Single configuration simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal boosting.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular shape enables efficient placement on circuit boards and facilitates uniform spacing for better thermal management.

Highest Frequency Band: L BAND

Suitable for L band frequencies, making it ideal for applications in wireless communications and radar systems.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle high power levels without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for dense packing of components to optimize circuit design.

Minimum DC Current Gain (hFE): 60

Minimum DC current gain of 60 ensures consistent and reliable amplification of signals.

Maximum Operating Temperature: 175 °C

High maximum operating temperature of 175°C allows for stable performance under varying environmental conditions.

Maximum Collector-Emitter Voltage: 10 V

Maximum collector-emitter voltage of 10V makes it suitable for low voltage applications, such as signal amplification.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in signal processing applications.

Maximum Collector Current (IC): 0.05 A

Maximum collector current of 0.05A ensures efficient signal amplification capabilities.

Terminal Finish: MATTE TIN

Matte tin finish offers good solderability and ensures reliable electrical connections.

Terminal Position: DUAL

Dual terminal position facilitates easy installation and connection to external circuitry.

Case Connection: COLLECTOR

Collector case connection enhances thermal dissipation and improves overall performance.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C ensures reliable soldering and reflow process during PCB assembly.

Reference Standard: CECC

Compliance with CECC standards ensures quality and reliability of the transistor for use in critical applications.

Nominal Transition Frequency (fT): 8000 MHz

High nominal transition frequency of 8000MHz allows for efficient signal processing and amplification in high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFG67/X,215 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

10 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

CECC

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFG67/X,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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