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BFG67XR

NXP Semiconductors

BFG67XR by NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7500 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 10,501 parts In-Stock

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Digiode

USA . 3,384 parts In-Stock

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3,384

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Vyrian

USA . 1,129 parts In-Stock

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Anansix

USA . 544 parts In-Stock

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544

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Distributors (Availability)

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Native Components

USA . 427 parts In-Stock

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$0.144

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$0.138

427

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Northwest PG Solutions

USA . 484 parts In-Stock

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$0.158

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$0.140

484

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One Stop Electronics

USA . 1,013 parts In-Stock

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$42.050

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$42.050

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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A-Z Elektronik GmbH

Germany . 10,525 parts In-Stock

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Corphita

USA . 4,733 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,739 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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UNI Independent Distributors

Spain . 1,500 parts In-Stock

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFG67XR attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

TUNER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

10 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

11 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFG67XR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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