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TIS84

Texas Instruments

TIS84 by Texas Instruments

TIS84 by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.25W, hFE of 30, and fT of 650MHz. The package is cylindrical with wire terminals and can handle up to 30V collector-emitter voltage at 150°C operating temperature.

Median Price

$0.290

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TEDSS.com

USA . 1,590 parts In-Stock

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$0.290

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1,590

$0.290

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PUI

USA . 15,792 parts In-Stock

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15,792

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Vyrian

USA . 6,736 parts In-Stock

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6,736

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Digiode

USA . 4,469 parts In-Stock

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4,469

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Distributors (Availability)

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Parana Technologies

USA . 1,773 parts In-Stock

1+ parts

$1.693

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$2.291

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$1.693

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DigiPath Technology Company

USA . 1,676 parts In-Stock

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$1.864

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$1.715

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1,676

$1.864

$1.715

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IDEA Electronic Components Group

UK . 2,015 parts In-Stock

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$1.902

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$1.712

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2,015

$1.902

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$1.712

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ChromeModa Solutions

Germany . 1,105 parts In-Stock

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$1.902

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$1.560

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1,105

$1.902

$1.560

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AZTECH Wire

Italy . 797 parts In-Stock

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$9.878

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797

$9.878

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One Stop Electronics

USA . 1,614 parts In-Stock

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$63.050

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Corphita

USA . 547 parts In-Stock

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Overview

The TIS84 by Texas Instruments is a top-of-the-line RF Small Signal Bipolar Junction Transistor that offers unparalleled quality and reliability. With Texas Instruments being a leading manufacturer in the industry, you can trust that this product is built to last. Ideal for amplifier applications in the very high-frequency band, this transistor provides exceptional performance and precision. Customers can expect value and benefits like enhanced signal amplification and improved efficiency with the TIS84, making it a must-have component for any electronic project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and insulation properties, ensuring durability and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications and provide a fast switching speed.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Capable of operating at very high frequencies, making it suitable for high-speed applications such as radio frequency amplification.

Maximum Power Dissipation (Abs): 0.25 W

Can handle higher power dissipation, allowing for efficient operation without overheating.

Minimum DC Current Gain (hFE): 30

A higher minimum DC current gain ensures stable and consistent amplification in the circuit.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, making it suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 30 V

With a high collector-emitter voltage rating, it can handle higher voltages in the circuit.

Maximum Collector Current (IC): 0.05 A

Can handle moderate collector currents, making it suitable for various amplifier applications.

Nominal Transition Frequency (fT): 650 MHz

With a high transition frequency, it is capable of providing high-frequency response in amplification circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) TIS84 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIS84 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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