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TIS87

Texas Instruments

TIS87 by Texas Instruments

TIS87 by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.4W, hFE of 30, and fT of 500MHz. The package is cylindrical with wire terminals and can handle up to 45V collector-emitter voltage at 150°C operating temperature.

Median Price

$0.492

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 6,864 parts In-Stock

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Digiode

USA . 4,979 parts In-Stock

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Anansix

USA . 2,079 parts In-Stock

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Bristol Electronics

USA . 333 parts In-Stock

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$0.492

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$0.420

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Microfarads

USA . 321 parts In-Stock

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LittleDiode

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Parana Technologies

USA . 988 parts In-Stock

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$1.460

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$2.146

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988

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DigiPath Technology Company

USA . 82 parts In-Stock

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$1.608

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$1.480

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ChromeModa Solutions

Germany . 6,791 parts In-Stock

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$1.641

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$1.346

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IDEA Electronic Components Group

UK . 1,297 parts In-Stock

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$1.641

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$1.477

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AZTECH Wire

Italy . 358 parts In-Stock

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$15.620

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One Stop Electronics

USA . 1,620 parts In-Stock

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$55.050

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Corphita

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Overview

Upgrade your electronic projects with the TIS87 by Texas Instruments, a top-quality RF Small Signal Bipolar Junction Transistor. Manufactured with precision and expertise, this NPN transistor offers exceptional amplification capabilities for very high frequency applications. With a durable plastic/epoxy package and a maximum power dissipation of 0.4W, the TIS87 provides reliability and performance in a compact, cylindrical package. Trust Texas Instruments for cutting-edge technology that delivers value and efficiency to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Allows for easy integration into NPN-based circuit designs.

Configuration: SINGLE

Simplifies circuit design by focusing on a single transistor configuration.

Transistor Application: AMPLIFIER

Ideal for amplification applications, ensuring reliable signal amplification.

Package Shape: ROUND

Facilitates easy mounting and installation in circular designs.

Terminal Form: WIRE

Enables easy connection to other components using wire terminals.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for applications requiring very high frequency operation.

No. of Terminals: 3

Provides necessary connections for proper transistor operation.

Maximum Power Dissipation (Abs): 0.4 W

Can handle power dissipation up to 0.4 watts, ensuring reliable performance.

Package Style (Meter): CYLINDRICAL

Offers a compact and efficient package style for space-constrained designs.

Minimum DC Current Gain (hFE): 30

Ensures consistent and stable amplification of input signals.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures up to 150°C.

Maximum Collector-Emitter Voltage: 45 V

Withstands high collector-emitter voltages, making it suitable for diverse applications.

Transistor Element Material: SILICON

Utilizes high-quality silicon for reliable and efficient transistor performance.

Maximum Collector Current (IC): 0.05 A

Handles collector currents up to 0.05 amperes, suitable for low current applications.

Terminal Position: BOTTOM

Facilitates easy mounting and connection of the transistor in circuit layouts.

Nominal Transition Frequency (fT): 500 MHz

Provides a high transition frequency for fast and efficient signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) TIS87 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIS87 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-004-1058, 5961010041058

NIIN

010041058

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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